数控局部SF6/H2下游等离子体大直径硅片无损伤压平技术

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872759

M. Yanagisawa, H. Ogawa, Y. Horiike

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引用次数: 0

摘要

本文报道了一种基于CDE(化学干蚀刻)的大直径硅片无损伤压平新技术，该技术采用数控局部SF/sub 6//H/sub 2/下游等离子体，研究了蚀刻硅片表面脏织构的形成机理。

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Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF6/H2 downstream plasma

This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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