沿晶界湿法蚀刻多晶硅形成量子点的新工艺

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872738

Seong-jong Yoo, Jongho Lee, Hyungcheol Shin

{"title":"沿晶界湿法蚀刻多晶硅形成量子点的新工艺","authors":"Seong-jong Yoo, Jongho Lee, Hyungcheol Shin","doi":"10.1109/IMNC.2000.872738","DOIUrl":null,"url":null,"abstract":"We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"58 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A new quantum dot formation process using wet etching of poly-Si along grain boundaries\",\"authors\":\"Seong-jong Yoo, Jongho Lee, Hyungcheol Shin\",\"doi\":\"10.1109/IMNC.2000.872738\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.\",\"PeriodicalId\":270640,\"journal\":{\"name\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"volume\":\"58 8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.2000.872738\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们提出了一种用极薄非晶硅刻蚀晶界来制备量子点的新方法。介绍了MOS电容器的I-V和C-V等电学特性。我们认为该方法简单合理，但仍需对纳米晶体的形成工艺进行优化。

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A new quantum dot formation process using wet etching of poly-Si along grain boundaries

We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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