发布求助
文献互助 智能选刊 最新文献

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)最新文献

筛选
英文 中文
Status of EUV lithography and plans in USA 美国EUV光刻技术现状及计划
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872747
C. Gwyn
{"title":"Status of EUV lithography and plans in USA","authors":"C. Gwyn","doi":"10.1109/IMNC.2000.872747","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872747","url":null,"abstract":"The major EUV lithography development program in the US is supported by the EUV LLC consortium composed of Advanced Micro Devices, Intel, Micron, and Motorola. The program goal is to facilitate the research, development and engineering to enable the Semiconductor Equipment Manufacturers (SEMs) to provide production quantities of 70 nm EUV lithography tools for IC manufacturing by 2005.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"35 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114036166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of piezoresistive mass flow sensor fabricated by porous silicon micromachining 多孔硅微加工压阻式质量流量传感器特性研究
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/imnc.2000.872632
Dong-Kwon Kim, Sung-Gyu Kang, Jeong-Yong Park, Jun-Hwan Sim, Jang-Kyoo Shin, Pyung Choi, Jong-Hyun Lee
{"title":"Characteristics of piezoresistive mass flow sensor fabricated by porous silicon micromachining","authors":"Dong-Kwon Kim, Sung-Gyu Kang, Jeong-Yong Park, Jun-Hwan Sim, Jang-Kyoo Shin, Pyung Choi, Jong-Hyun Lee","doi":"10.1109/imnc.2000.872632","DOIUrl":"https://doi.org/10.1109/imnc.2000.872632","url":null,"abstract":"Piezoresistive flow sensors with four different types of microcantilever structures were fabricated using [100], n/n+/n three-layer silicon wafer and their characteristics were investigated.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126441168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The plasma treatment and dry etching characteristics of organic low-k dielectrics 有机低k介电体的等离子体处理及干刻蚀特性
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/IMNC.2000.872757
T. Wei, C.H. Liu
{"title":"The plasma treatment and dry etching characteristics of organic low-k dielectrics","authors":"T. Wei, C.H. Liu","doi":"10.1109/IMNC.2000.872757","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872757","url":null,"abstract":"To achieve high speed and high performance, the feature size of future ULSI circuits must be continuing shrinking. RC delay becomes a major limitation for device performance. Various types of organic low-k polymers have been developed as promising candidates for next generation interconnection dielectrics. However, the electrical, chemical, mechanical, and thermal properties of these new materials are not fully satisfied, and the patterning of these materials was rarely discussed. In this study, we investigated the plasma treatment and dry etching characteristics of two organic low-k dielectrics, FLARE/sup TM/ 2.0 and fluorinated amorphous carbon (a-C:F).","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121148780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Etching characteristics of fine Ta patterns with electron cyclotron resonance chlorine plasma 电子回旋共振氯等离子体刻蚀精细Ta图案的特性
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/imnc.2000.872717
Sang Hoon Kim, Sang-Gyun Woo, Jinho Ahn
{"title":"Etching characteristics of fine Ta patterns with electron cyclotron resonance chlorine plasma","authors":"Sang Hoon Kim, Sang-Gyun Woo, Jinho Ahn","doi":"10.1109/imnc.2000.872717","DOIUrl":"https://doi.org/10.1109/imnc.2000.872717","url":null,"abstract":"Next generation lithography requires masks with new structures fabricated by silicon process. We have studied etching characteristics of Ta, which is a strong candidate for absorber or scatterer patterns in NGL masks. Many groups reported Ta etching with mixture gases, but we performed Ta etching with pure chlorine chemistry and obtained a clear 0.2 /spl mu/m line and space patterns through the step etching process.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122460009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effects of solvent on the properties of sol-gel derived PZT thin film 溶剂对溶胶-凝胶衍生PZT薄膜性能的影响
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/imnc.2000.872723
Ji Yun Jung, Woo Sik Kim, Hyung-Ho Park
{"title":"The effects of solvent on the properties of sol-gel derived PZT thin film","authors":"Ji Yun Jung, Woo Sik Kim, Hyung-Ho Park","doi":"10.1109/imnc.2000.872723","DOIUrl":"https://doi.org/10.1109/imnc.2000.872723","url":null,"abstract":"Pb(Zr,Ti)O/sub 3/ (PZT) thin films have been actively investigated for use in nonvolatile memory devices, piezoelectric sensors, pyroelectric infrared detectors and surface acoustic wave (SAW) devices etc. To fabricate PZT thin film, sol-gel method has been commonly used because of its several advantages such as ease of composition control, high purity, and low processing temperature. In sol-gel processing, it was reported that the solvent of stock solution strongly effects the final properties of PZT thin film. However, a solvent for stock solution is limited from the consideration of reaction with precursor. 2-methoxyethanol has been generally used due to its high reactivity. However, to improve the density of film, solvent with light molecular weight is more desirable. Even though the solvents with light molecular weight has the advantage, those have been rarely used as solvent because it is difficult to control the reaction kinetic between the solvent and precursor alkoxide. Due to the limitations mentioned above, there were few reports about the sol-gel derived PZT thin films using light alcohol such as methanol and ethanol. Moreover, comparing the effects of various solvents to final PZT films has never been reported. Therefore, in this work the authors study the effects of the solvent on the properties of PZT films.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123756603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization dependence of photoinduced birefringence in chalcogenide thin film 硫系薄膜光致双折射的偏振依赖性
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/imnc.2000.872704
Sun-Joo Jang, Cheol-Ho Yeo, Jeong-Il Park, Hyun-Young Lee, Hong-Bay Chung
{"title":"Polarization dependence of photoinduced birefringence in chalcogenide thin film","authors":"Sun-Joo Jang, Cheol-Ho Yeo, Jeong-Il Park, Hyun-Young Lee, Hong-Bay Chung","doi":"10.1109/imnc.2000.872704","DOIUrl":"https://doi.org/10.1109/imnc.2000.872704","url":null,"abstract":"In this study, we have investigated the polarization dependence of photoinduced birefringence (PB), /spl Delta/n in As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/ chalcogenide thin film with a He-Ne Laser at 633 nm as a pumping beam and a semiconductor laser at 780 nm as a probing beam. Also, the PB transformation for polarization states-linear, circular, elliptical polarization-was investigated. The polarization state of circular, elliptical was produced using a /spl lambda//4 wave plate. The thickness of the film is about 0.9 /spl mu/m which was made close to the optimal thickness, 1 /spl mu/m, which is the penetration depth of the pumping light.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133953108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experimental results obtained by EUV laboratory tool at NewSUBARU 在新斯巴鲁的EUV实验室工具上获得的实验结果
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/IMNC.2000.872764
H. Kinoshita, T. Watanabe
{"title":"Experimental results obtained by EUV laboratory tool at NewSUBARU","authors":"H. Kinoshita, T. Watanabe","doi":"10.1109/IMNC.2000.872764","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872764","url":null,"abstract":"At the Himeji Institute of Technology (HIT) the EUVL Laboratory Tool which operates at the wavelength of 13.5 nm with the 0.1 numerical aperture by using 3-mirrors imaging system has been completed. In order to be competitive with other NGL technologies of EUV lithography tool should demonstrate the 70 nm pattern in the large exposure field, uniformity and CD controllability of the entitle exposure area, mask and wafer alignment accuracy, and throughput rapidly. This paper will describes results of some exposure experiments using the 3-aspherical EUVL tool installed in SR facility of NewSUBARU and present the future prospects of EUVL.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124168074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contrast measurement of reflection mask with Cr and Ta absorber for Extreme Ultraviolet Lithography 极紫外光刻用Cr和Ta吸收剂反射掩膜的对比测量
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/IMNC.2000.872767
M. Niibe, T. Watanabe, H. Nii, T. Tanaka, H. Kinoshita
{"title":"Contrast measurement of reflection mask with Cr and Ta absorber for Extreme Ultraviolet Lithography","authors":"M. Niibe, T. Watanabe, H. Nii, T. Tanaka, H. Kinoshita","doi":"10.1109/IMNC.2000.872767","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872767","url":null,"abstract":"We chose chromium, Cr, and tantalum, Ta, metals as a new absorbing material for extreme ultraviolet lithography (EUVL) reflection mask. These metals are frequently used in photomask or X-ray mask for lithography and their fabrication processes are well investigated. This paper shows the calculated transmittance of EUV light for various metals at the wavelength of 13.5 nm. Thee transmittance (or absorbing ability) of Cr and Ta metals for the EUV light is nearly equal to that of tungsten, W. We have fabricated the reflection masks with Cr or Ta metal absorbers deposited on top of Mo/Si multilayer reflectors.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133786909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Moore's law-is there more? 摩尔定律——还有更多吗?
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI: 10.1109/IMNC.2000.872595
K. H. Brown
{"title":"Moore's law-is there more?","authors":"K. H. Brown","doi":"10.1109/IMNC.2000.872595","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872595","url":null,"abstract":"Lithography improvements and device scaling have been the major driver behind the industry productivity as predicted by Moore's law over the past three decades. In fact for the past five years, in an effort to remain the productivity curve when other improvements (e.g., tool reliability, process yield) have reached their practical limits, the industry has accelerated the introduction of smaller feature sizes. Between 1994 and 1999 the technology roadmap for feature size introduction has been pulled in three years. The current timeline has features below 0.13um introduced in product by 2001. The ability to continue on this path will be dominated by two key factors at dimensions below 0.13 /spl mu/m. The first factor is the approaching limits to the scaling laws and performance benefits at the chip level. The second is cost. The author briefly reviews possible future developments in this field.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130407814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信