在新斯巴鲁的EUV实验室工具上获得的实验结果

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 1900-01-01 DOI:10.1109/IMNC.2000.872764

H. Kinoshita, T. Watanabe

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摘要

在姬路工业大学(Himeji Institute of Technology, HIT)，利用3反射镜成像系统在波长13.5 nm、0.1数值孔径的EUVL实验室工具已经完成。为了与其他NGL技术竞争，EUV光刻工具必须在大曝光场中展示70 nm图案，在整个曝光区域的均匀性和CD可控性，掩模和晶圆对准精度以及快速的通量。本文将介绍安装在新斯巴鲁SR设备上的3非球面EUVL工具的一些暴露实验结果，并对EUVL的未来发展进行展望。

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Experimental results obtained by EUV laboratory tool at NewSUBARU

At the Himeji Institute of Technology (HIT) the EUVL Laboratory Tool which operates at the wavelength of 13.5 nm with the 0.1 numerical aperture by using 3-mirrors imaging system has been completed. In order to be competitive with other NGL technologies of EUV lithography tool should demonstrate the 70 nm pattern in the large exposure field, uniformity and CD controllability of the entitle exposure area, mask and wafer alignment accuracy, and throughput rapidly. This paper will describes results of some exposure experiments using the 3-aspherical EUVL tool installed in SR facility of NewSUBARU and present the future prospects of EUVL.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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