P. Kurz, Hans-Juergen Mann, M. Antoni, W. Singer, M. Muhlbeyer, F. Melzer, U. Dinger, M. Weiser, S. Stacklies, G. Seitz, F. Haidl, E. Sohmen, W. Kaiser
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Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.
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