Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)最新文献_第2页

Fundamental study of "matrix pattern imaging", EB system “矩阵模式成像”，EB系统的基础研究

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872665

S. Tanimoto, Y. Someda, M. Okumura, H. Ohta, Y. Sohda, N. Saito

引用次数: 0

Probing semiconductor nano-structures with synchrotron radiation and STM 用同步辐射和STM探测半导体纳米结构

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872733

B. Hamilton

引用次数: 0

Growth of new fluoride single crystals for optical applications 光学用新型氟化物单晶的生长

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872746

T. Fukuda, K. Shimamura, N. Sarukura

引用次数: 0

AFM lithography combined with optical lithography AFM光刻与光学光刻相结合

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872701

M. Ishibashi, S. Heike, T. Hashizume

{"title":"AFM lithography combined with optical lithography","authors":"M. Ishibashi, S. Heike, T. Hashizume","doi":"10.1109/IMNC.2000.872701","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872701","url":null,"abstract":"Reports on a hybrid method of AFM lithography and optical lithography that increases the drawing speed and decreases the drawing length. Advanced devices, such as quantum ones, have both nanometer-scale structures and large area structures, such as contact pads. It takes a long time to fabricate all the patterns using AFM lithography alone. It is preferable to combine AFM lithography with optical lithography. In this way, AFM lithography is used for nanometer structures only. When this hybrid process is used, the most significant problem is aligning the patterns produced by optical lithography and AFM lithography. To solve this problem, we use small step structures fabricated by slight development on the resist surface, fabricated by optical-lithography exposure. The positional information of the pattern structure in the resist film, fabricated by using optical lithography, is obtained by observing the steps with AFM. The additional patterning is performed by using AFM lithography. Patterns can be observed without exposure, since the force needed to observe the surface and that for the exposure are different.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132328765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Silicon needle crystals fabricated by high-selective anisotropic dry etching and their characteristics of field emission current 高选择性各向异性干刻蚀制备的硅针晶体及其场发射电流特性

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872656

M. Kanechika, Y. Mitsushima

引用次数: 0

Control of current hysteresis effects in a GaAs/n-AlGaAs quantum trap FET with embedded InAs quantum dots 嵌入InAs量子点的GaAs/n-AlGaAs量子阱场效应管电流滞后效应的控制

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872735

H. Kim, T. Noda, T. Kawazu, H. Sakaki

引用次数: 0

Precise delineation characteristics for 1/spl times/X-ray mask using advanced electron beam mask writer EB-X3 使用先进的电子束掩模编写器EB-X3精确描绘1/spl次/ x射线掩模的特征

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872648

S. Tsuboi, H. Watanabe, M. Ezaki, H. Aoyama, Y. Kikuchi, Y. Nakayama, S. Ohki, T. Watanabe, T. Morosawa, K. Saito, M. Oda, T. Matsuda

引用次数: 0

Structural and optical properties of Ge nanocrystals in SiO/sub 2/ glasses fabricated by multi-energy ion implantation 多能离子注入制备SiO/ sub2 /玻璃中锗纳米晶的结构和光学性质

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872687

K. Masuda, M. Yamamoto, M. Kanaya, Y. Kanemitsu

{"title":"Structural and optical properties of Ge nanocrystals in SiO/sub 2/ glasses fabricated by multi-energy ion implantation","authors":"K. Masuda, M. Yamamoto, M. Kanaya, Y. Kanemitsu","doi":"10.1109/IMNC.2000.872687","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872687","url":null,"abstract":"The discovery of efficient photoluminescence (PL) from Si and Ge nanocrystals at room temperature has stimulated considerable efforts in understanding optical properties of indirect-gap group IV semiconductor nanocrystals. Bulk Ge crystal has a larger dielectric constant and smaller effective masses of carriers compared to the case of bulk Si crystal. Then, it is expected that quantum confinement effects would appear more pronounced in Ge nanocrystals than in Si nanocrystals. Recently, a number of different techniques have been developed to synthesize semiconductor nanocrystals. In particular, high-dose ion implantation is one of the most versatile techniques for nanocrystal fabrication, because the nanocrystal size can be controlled by changing the ion dose, the kinetic energy of ions and the annealing temperature. In this work, we have fabricated light-emitting Ge nanocrystals by means of Ge/sup +/ ion implantation into SiO/sub 2/ glasses followed by thermal annealing. Using multi-energy ion implantation techniques, the Ge nanocrystals samples with very small size fluctuation are obtained and these samples show near-infrared PL with a narrow spectral bandwidth.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117076012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ECR etching of /spl alpha/-Ta for x-ray mask absorber using chlorine and fluoride gas mixture 用氯气和氟化物混合气体刻蚀x射线掩膜吸收剂/spl α /-Ta

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872617

T. Tsuchizawa, H. Iriguchi, C. Takahashi, M. Shimada, S. Uchiyama, M. Oda

引用次数: 0

Prediction of resist non-uniformity caused by underlying pattern density and topology 由底层图案密度和拓扑结构引起的抗蚀剂不均匀性预测

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872641

Jin-Young Kim, D. Son, Eungsung Seo, Y. Sohn, Heung-Jin Bak, Hye-keun Oh

引用次数: 0