用同步辐射和STM探测半导体纳米结构

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872733

B. Hamilton

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引用次数: 0

摘要

在这次演讲中，我描述了在UMIST和Daresbury实验室正在进行的工作，该实验室为测量纳米级结构提供了新的实验工具。同步辐射，L边吸收实验已经证明了局部化学和电子行为可以在纳米结构硅上联系起来。最近的研究也表明，电子通过纳米结构薄膜的传输是由渗透现象控制的，类似于聚合物薄膜中的传输。综述了STM与光子探针相结合的可能性，并给出了使用STM检测高局域光谱的例子。

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Probing semiconductor nano-structures with synchrotron radiation and STM

In this talk, I describe work being carried out at UMIST and Daresbury Laboratory which is providing new experimental tools for measuring nano-scale structures. Synchrotron radiation, L edge absorption experiments, have demonstrated that local chemistry and electronic behaviour can be linked on the nano-structured silicon. Recent work has also shown that electron transport through nano-structured films is controlled by percolation phenomena, similar to transport in polymer films. The possibility of combining STM with photon probes is reviewed and examples of highly localised optical spectroscopy detected using STM are given.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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