Precise delineation characteristics for 1/spl times/X-ray mask using advanced electron beam mask writer EB-X3

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872648

S. Tsuboi, H. Watanabe, M. Ezaki, H. Aoyama, Y. Kikuchi, Y. Nakayama, S. Ohki, T. Watanabe, T. Morosawa, K. Saito, M. Oda, T. Matsuda

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Abstract

A variable-shaped electron beam (e-beam) mask writer, EB-X3 was developed for 100 nm node 1/spl times/X-ray mask fabrication. It features a stable electron column of 100 kV and the address unit of 1 nm. This paper describes delineation characteristics of the EB-X3 on X-ray membrane mask. We have evaluated image placement (IP) accuracy and e-beam proximity effects on the X-ray membrane delineated with the EB-X3. In order to achieve highly precise IP and CD accuracy, we evaluated beam drift, temperature control, mask blanks support method, resist process, and proximity effect. Precise temperature control and a three-point support pallet are keys for excellent IP. Good CD control less than 10 nm was obtained with low proximity effects with ZEP resist and normal-hexyl acetate developer. The EB-X3 was used for X-ray mask fabrication in conjunction with an X-ray stepper in exposure experiments.

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使用先进的电子束掩模编写器EB-X3精确描绘1/spl次/ x射线掩模的特征

研制了一种用于100 nm节点1/spl次/ x射线掩模制作的可变形状电子束(e-beam)掩模编写器EB-X3。它具有100 kV的稳定电子柱和1 nm的寻址单位。本文描述了EB-X3在x射线膜掩膜上的圈定特性。我们已经评估了图像放置(IP)精度和电子束接近对EB-X3描绘的x射线膜的影响。为了实现高精度的IP和CD精度，我们评估了光束漂移、温度控制、掩模毛坯支撑方法、抗蚀工艺和邻近效应。精确的温度控制和三点支撑托盘是优秀IP的关键。ZEP抗蚀剂和正己酯乙酸显影剂在小于10 nm范围内具有良好的CD控制效果，接近效应低。在曝光实验中，EB-X3与x射线步进机一起用于x射线掩膜制作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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