由底层图案密度和拓扑结构引起的抗蚀剂不均匀性预测

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872641

Jin-Young Kim, D. Son, Eungsung Seo, Y. Sohn, Heung-Jin Bak, Hye-keun Oh

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引用次数: 0

摘要

利用无量纲参数和液体抗蚀剂薄膜厚度，开发了一种能够预测不同特征类型、密度和拓扑结构下自旋涂覆抗蚀剂厚度的模拟系统。模拟了非均匀抗蚀剂厚度的临界尺寸随周围拓扑结构和图案密度的变化。

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Prediction of resist non-uniformity caused by underlying pattern density and topology

We developed a simulator that can predict spin coated resist thickness with different feature type, density and topology by using dimensionless parameter and liquid resist film thickness. The change of critical dimension with surrounding topology and pattern density is simulated for the non-uniform resist thickness.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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