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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)最新文献

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Relative domination between Cl/sup +/ and Cl2/sup +/ ions in time-modulated inductively coupled Cl2 plasma investigated with laser-induced fluorescence technique 用激光诱导荧光技术研究了时间调制电感耦合Cl2等离子体中Cl/sup +/和Cl2/sup +/离子的相对支配作用
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872709
S. Kumagai, M. Sasaki, M. Koyanagi, K. Hane
{"title":"Relative domination between Cl/sup +/ and Cl2/sup +/ ions in time-modulated inductively coupled Cl2 plasma investigated with laser-induced fluorescence technique","authors":"S. Kumagai, M. Sasaki, M. Koyanagi, K. Hane","doi":"10.1109/IMNC.2000.872709","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872709","url":null,"abstract":"Time-modulated plasma etching has been newly applied to the etching of semiconductor devices. In this etching technique, the electron temperature is lowered by cutting-off plasma discharge periodically. In this study, we simultaneously measure the relative densities of Cl/sub 2//sup +/ and metastable chlorine atomic ions Cl/sup +*/ in the time-modulated ICP and CW plasma by laser-induced fluorescence (LIF) technique and discuss their relative importance in the positive ions.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125757448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solid polymer dye microlaser fabricated using Si mold having optically smooth surfaces 固体聚合物染料微激光器用硅模具制造，具有光学光滑的表面
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872671
M. Sasaki, Y. Akatu, I. Li, K. Hane
{"title":"Solid polymer dye microlaser fabricated using Si mold having optically smooth surfaces","authors":"M. Sasaki, Y. Akatu, I. Li, K. Hane","doi":"10.1109/IMNC.2000.872671","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872671","url":null,"abstract":"In this study, a new fabrication method of the solid polymer dye microlaser is described using the Si mold having the optically smooth side walls. For preparing the optically smooth surfaces, the characteristics of the anisotropic etching is utilized. The narrow peaks which can be attributed to morphology dependent resonances of a hexagonal polymer replica of the Si mold are observed.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125789279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technology and performance of X-ray stepper for volume production 量产x射线步进机的技术与性能
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872646
N. Mizusawa, K. Uda, Y. Tanaka, H. Ohta, Y. Watanabe
{"title":"Technology and performance of X-ray stepper for volume production","authors":"N. Mizusawa, K. Uda, Y. Tanaka, H. Ohta, Y. Watanabe","doi":"10.1109/IMNC.2000.872646","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872646","url":null,"abstract":"Proximity X-ray lithography (PXL) has finished the demonstration stage of device fabrication and has started to be applied for volume production. We started the development of X-ray lithography tool in the middle of 1980's, and in 1992 we have installed our prototype machine in the SR facility of Mitsubishi Electric Corporation (MELCO) and we have evaluated the machine in collaboration with MELCO. In the collaboration study, we have confirmed the system concept of X-ray stepper and clarified subjects for volume production tool development.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125945434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Young's modulus evaluation of Si thin film fabricated by compatible process with Si MEMSs 与硅mems相容制硅薄膜的杨氏模量评估
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872633
Y. Hirai, Y. Marushima, K. Nishikawa, Y. Tanaka
{"title":"Young's modulus evaluation of Si thin film fabricated by compatible process with Si MEMSs","authors":"Y. Hirai, Y. Marushima, K. Nishikawa, Y. Tanaka","doi":"10.1109/IMNC.2000.872633","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872633","url":null,"abstract":"In this paper, in-situ evaluation of a Young's modulus for a polycrystalline Si (poly-Si) thin film on a PSG (Phosphorous doped silica glass) sacrifice layer is demonstrated based on the pull-in voltage of a cantilever, which is easily prepared during the MEMS's fabrication process.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129847055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
ArF lithography for the 130 and 100 nm technology nodes 用于130和100纳米技术节点的ArF光刻
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872597
K. Ronse
{"title":"ArF lithography for the 130 and 100 nm technology nodes","authors":"K. Ronse","doi":"10.1109/IMNC.2000.872597","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872597","url":null,"abstract":"The status of 193 nm lithography for the 130 and 100 nm nodes is outlined. For the first node, the experimental results are compared to 248 nm. Data are shown illustrating the performance of 193 nm lithography for the 100 nm technology node and predictions of further required improvements are made.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124557522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High accurate optical proximity correction under the influences of lens aberration in 0.15 /spl mu/m logic process 在0.15 /spl mu/m逻辑过程中透镜像差影响下的高精度光学近距离校正
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872601
K. Harazaki, Y. Hasegawa, Y. Shichijo, H. Tabuchi, K. Fujii
{"title":"High accurate optical proximity correction under the influences of lens aberration in 0.15 /spl mu/m logic process","authors":"K. Harazaki, Y. Hasegawa, Y. Shichijo, H. Tabuchi, K. Fujii","doi":"10.1109/IMNC.2000.872601","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872601","url":null,"abstract":"In this paper, the high correction accuracy of simulation-based optical proximity correction under a 0.15/spl mu/m logic process is described. We applied simulation-based OPC to actual gate poly and contact photo-patterning. We consider the influences of lens aberration of the optical projection system in 0.15/spl mu/m logic photo patterning, such as 0.12/spl mu/m reduced gate photo, and 0.18/spl mu/m contact photo using KrF excimer lithography. We estimate these influences with the Seidel aberration which are analyzed by aerial image simulation. The common process latitudes for typical patterns are calculated, and the aberration effect was evaluated.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122414404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A novel RET for random pattern formation utilizing attenuating non-phase-shift assist pattern 一种利用衰减非相移辅助方向图的随机方向图形成新方法
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872614
S. Nakao, A. Tokui, K. Tsujita, I. Arimoto, W. Wakamiya
{"title":"A novel RET for random pattern formation utilizing attenuating non-phase-shift assist pattern","authors":"S. Nakao, A. Tokui, K. Tsujita, I. Arimoto, W. Wakamiya","doi":"10.1109/IMNC.2000.872614","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872614","url":null,"abstract":"A novel resolution enhancement technology (RET) for random pattern formation which utilizes attenuating non-phase-shift (Atten-NPS) assist pattern is proposed based on optical image calculation. By addition of Atten-NPS assist pattern on mask for isolated Feature, much improvement of imaging characteristics is-obtained under modified illumination. In the application of this RET, Cr aperture size of assist pattern on mask can make similar to that of main pattern. Consequently, difficulty in mask fabrication for conventional assist pattern method will be overcome.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126609407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical MEF calculation for periodic patterns 周期模式的理论MEF计算
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872602
T. Terasawa, N. Hasegawa
{"title":"Theoretical MEF calculation for periodic patterns","authors":"T. Terasawa, N. Hasegawa","doi":"10.1109/IMNC.2000.872602","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872602","url":null,"abstract":"Current reduction projection exposure tools with a large numerical aperture lens can fabricate fine features with smaller than exposure wavelength using several resolution enhancement techniques. In such subwavelength lithography, a precise control of the mask becomes critical because a degradation of the image due to proximity effects become much larger than would be expected from the normal reduction ratio of the projection lens. The mask pattern errors are amplified at the wafer and the ratio of this amplification is called MEF (mask error enhancement factor). In this paper, we show that the MEF can be calculated theoretically based on the Fourier optics and we clarify the behavior of MEF for periodic line patterns. The MEFs related to alternate phase shift mask (PSM), attenuated PSM, and binary mask are evaluated.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124428186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Chemically amplified electron beam positive resist with acetal protecting group-effect of the additives on resist properties 化学放大电子束带缩醛保护团的抗蚀剂添加剂对抗蚀剂性能的影响
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872768
S. Saito, N. Kihara, T. Ushirogouchi
{"title":"Chemically amplified electron beam positive resist with acetal protecting group-effect of the additives on resist properties","authors":"S. Saito, N. Kihara, T. Ushirogouchi","doi":"10.1109/IMNC.2000.872768","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872768","url":null,"abstract":"We discuss a high-sensitivity electron beam (EB) positive resist based on acetal-protected poly(hydroxystyrene) (PHS) and also propose a new chemical amplification system. In this system, the generated acid after EB exposure acts as the catalyst for the deprotection reaction, as well as the water-generating reaction. This system can make the combination of acetal protecting group and strong acid possible in EB lithography.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122404672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Imprint lithography using triple-layer-resist and its application to MOSFET fabrication 三层抗蚀剂压印技术及其在MOSFET制造中的应用
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872730
H. Nakamura, A. Baba, T. Asano
{"title":"Imprint lithography using triple-layer-resist and its application to MOSFET fabrication","authors":"H. Nakamura, A. Baba, T. Asano","doi":"10.1109/IMNC.2000.872730","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872730","url":null,"abstract":"In this paper, we report pattern transfer characteristic of the imprint lithography by employing a triple-layer-resist method. In addition, fabrication of MOSFETs having the gate length down to 100 nm is demonstrated. Gate oxide integrity is also tested in order to investigate mechanical damage of the imprint stress on devices.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127652700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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