{"title":"与硅mems相容制硅薄膜的杨氏模量评估","authors":"Y. Hirai, Y. Marushima, K. Nishikawa, Y. Tanaka","doi":"10.1109/IMNC.2000.872633","DOIUrl":null,"url":null,"abstract":"In this paper, in-situ evaluation of a Young's modulus for a polycrystalline Si (poly-Si) thin film on a PSG (Phosphorous doped silica glass) sacrifice layer is demonstrated based on the pull-in voltage of a cantilever, which is easily prepared during the MEMS's fabrication process.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Young's modulus evaluation of Si thin film fabricated by compatible process with Si MEMSs\",\"authors\":\"Y. Hirai, Y. Marushima, K. Nishikawa, Y. Tanaka\",\"doi\":\"10.1109/IMNC.2000.872633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, in-situ evaluation of a Young's modulus for a polycrystalline Si (poly-Si) thin film on a PSG (Phosphorous doped silica glass) sacrifice layer is demonstrated based on the pull-in voltage of a cantilever, which is easily prepared during the MEMS's fabrication process.\",\"PeriodicalId\":270640,\"journal\":{\"name\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.2000.872633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Young's modulus evaluation of Si thin film fabricated by compatible process with Si MEMSs
In this paper, in-situ evaluation of a Young's modulus for a polycrystalline Si (poly-Si) thin film on a PSG (Phosphorous doped silica glass) sacrifice layer is demonstrated based on the pull-in voltage of a cantilever, which is easily prepared during the MEMS's fabrication process.