{"title":"化学放大电子束带缩醛保护团的抗蚀剂添加剂对抗蚀剂性能的影响","authors":"S. Saito, N. Kihara, T. Ushirogouchi","doi":"10.1109/IMNC.2000.872768","DOIUrl":null,"url":null,"abstract":"We discuss a high-sensitivity electron beam (EB) positive resist based on acetal-protected poly(hydroxystyrene) (PHS) and also propose a new chemical amplification system. In this system, the generated acid after EB exposure acts as the catalyst for the deprotection reaction, as well as the water-generating reaction. This system can make the combination of acetal protecting group and strong acid possible in EB lithography.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Chemically amplified electron beam positive resist with acetal protecting group-effect of the additives on resist properties\",\"authors\":\"S. Saito, N. Kihara, T. Ushirogouchi\",\"doi\":\"10.1109/IMNC.2000.872768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss a high-sensitivity electron beam (EB) positive resist based on acetal-protected poly(hydroxystyrene) (PHS) and also propose a new chemical amplification system. In this system, the generated acid after EB exposure acts as the catalyst for the deprotection reaction, as well as the water-generating reaction. This system can make the combination of acetal protecting group and strong acid possible in EB lithography.\",\"PeriodicalId\":270640,\"journal\":{\"name\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"volume\":\"132 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.2000.872768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Chemically amplified electron beam positive resist with acetal protecting group-effect of the additives on resist properties
We discuss a high-sensitivity electron beam (EB) positive resist based on acetal-protected poly(hydroxystyrene) (PHS) and also propose a new chemical amplification system. In this system, the generated acid after EB exposure acts as the catalyst for the deprotection reaction, as well as the water-generating reaction. This system can make the combination of acetal protecting group and strong acid possible in EB lithography.