用于130和100纳米技术节点的ArF光刻

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872597

K. Ronse

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摘要

概述了130和100纳米节点的193nm光刻技术的现状。对于第一个节点，对比了248 nm的实验结果。数据显示了193nm光刻技术在100nm技术节点上的性能，并预测了进一步需要改进的地方。

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ArF lithography for the 130 and 100 nm technology nodes

The status of 193 nm lithography for the 130 and 100 nm nodes is outlined. For the first node, the experimental results are compared to 248 nm. Data are shown illustrating the performance of 193 nm lithography for the 100 nm technology node and predictions of further required improvements are made.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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