通过快速重离子轰击，湿法和干法蚀刻，在SiO/ sub2 / on Si上形成单独的空穴

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872629

K. Awazu, S. Ishii, K. Shima

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引用次数: 0

摘要

已知快速重离子轰击可以在非晶SiO/sub 2/ (a-SiO/sub 2/)中产生潜在径迹，并通过刻蚀变成可见的空穴。本研究的目的是用各种蚀刻方法控制孔的轮廓。通过湿法刻蚀，在SiO/sub - 2/轰击表面可以得到单独的圆锥孔。相比之下，在SiO/sub 2/上通过混合蚀刻可以形成柱状孔，这意味着48% HF的湿法蚀刻，然后是CHF/sub 3/的RIE。在被轰炸的SiO/ sub2 /上没有观察到空穴，随后只有RIE。

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Creation of individual holes in SiO/sub 2/ on Si by swift heavy ion bombardment followed by wet and dry etching

It has been known that swift heavy ion bombardment could create latent tracks in amorphous SiO/sub 2/ (a-SiO/sub 2/) which turned into a visible hole by etching. Goal of the present examination is to control the hole contour with various etching methods. It was found that individual conic holes could be obtained on bombarded SiO/sub 2/ by wet etching. In contrast, columnar holes could be created on bombarded SiO/sub 2/ by the hybrid etching, which implied a wet etching with 48% HF followed by RIE with CHF/sub 3/. No holes have been observed on the bombarded SiO/sub 2/ followed by the RIE only.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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