Scanning Capacitance Microscopy for measuring device carrier profiles beyond the 100 nm generation

Abstract

Scanning Capacitance Microscopy (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-sectioned silicon transistors. Since 1992, there has been a program at the National Institute of Standards and Technology in the United States to develop the measurement techniques and theoretical modeling necessary to make SCM a practical metrology for quantitative measurement of 2-D carrier profiles. The SCM carrier profiling technique will be described in detail from sample preparation, to SCM image measurement, and to extraction of the final 2-D carrier profile.