Control of crystalline structure and ferroelectric properties of Pb(ZrxTi/sub 1-X/)O3 films by pulsed laser deposition

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872761

H. Fujita, S. Goto, S. Agata, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda

引用次数: 1

Abstract

We have investigated Pb(Zr/sub X/Ti/sub 1-X/)O/sub 3/ (PZT) films on Pt/SiO/sub 2//Si substrates formed by pulsed laser deposition (PLD) and subsequent rapid thermal annealing (RTA) under various growth conditions. X-ray diffraction analysis revealed that preferentially [100]-oriented perovskite PZT films with trigonal structure were formed after RTA from as-deposited films which had consisted of small grains with pyroclore structure. The degree of [100]-orientation of the PZT film increased with the oxygen partial pressure during PLD. The capacitors made from these films showed higher remnant polarization than those from randomly oriented films.

查看原文本刊更多论文

脉冲激光沉积Pb(ZrxTi/sub - 1-X/)O3薄膜晶体结构和铁电性能的控制

我们研究了在不同生长条件下，通过脉冲激光沉积(PLD)和随后的快速热退火(RTA)在Pt/SiO/sub 2/ Si衬底上形成的Pb(Zr/sub X/Ti/sub 1-X/)O/sub 3/ (PZT)薄膜。x射线衍射分析表明，由具有焦闪石结构的小颗粒组成的沉积膜经RTA后形成了具有三角结构的优先[100]取向钙钛矿PZT薄膜。在PLD过程中，PZT薄膜的[100]取向度随着氧分压的增大而增大。用这些薄膜制成的电容器比用随机取向薄膜制成的电容器表现出更高的剩余极化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

自引率

0.00%

发文量