电子投影光刻用掩膜电子透射特性的直接测量

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872661

E. Nomura, H. Yamashita, Y. Ochiai, T. Baba

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引用次数: 0

摘要

对于高通量电子投影光刻，提出了两种类型的掩模，即模板掩模和膜掩模。对于这两种类型，了解掩膜与辐照电子之间的相互作用是开发掩膜和整个EB暴露系统的关键。在本研究中，我们直接测量了电子通过膜传输的能量和偏转角分布。

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Direct measurement of electron transmission properties of mask membranes for electron projection lithography

For high-throughput electron projection lithography, two types of masks, stencil- and membrane-masks, have been proposed. For the both types, understanding the interaction between a mask and irradiated electrons is the key to the development of masks and whole EB exposure systems. In the present study, we measured energy and deflection-angle distributions of electrons transmitted through membranes in a direct manner.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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