Direct measurement of electron transmission properties of mask membranes for electron projection lithography

Abstract

For high-throughput electron projection lithography, two types of masks, stencil- and membrane-masks, have been proposed. For the both types, understanding the interaction between a mask and irradiated electrons is the key to the development of masks and whole EB exposure systems. In the present study, we measured energy and deflection-angle distributions of electrons transmitted through membranes in a direct manner.