GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)最新文献_第4页

High reliability non-hermetic 0.1 /spl mu/m GaAs pseudomorphic HEMT MMIC amplifiers 高可靠性非密封式0.1 /spl μ m GaAs伪晶HEMT MMIC放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964371

Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Biedenbender, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit

{"title":"High reliability non-hermetic 0.1 /spl mu/m GaAs pseudomorphic HEMT MMIC amplifiers","authors":"Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Biedenbender, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit","doi":"10.1109/GAAS.2001.964371","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964371","url":null,"abstract":"High reliability performance of a Q-band low-noise MMIC amplifier fabricated using 0.1 /spl mu/m production AlGaAs/InGaAs/GaAs HEMT process technology is reported. Operating at an accelerated DC bias condition of Vds=4.2 V and Ids=150 mA/mm, two-stage balanced amplifiers were lifetested at three temperatures (T/sub ambient/=255/spl deg/C, T/sub ambient/=270/spl deg/C, and T/sub ambient/=285/spl deg/C) in air ambient. After stress, MMIC amplifiers were brought down to room temperature and small-signal microwave characteristics were measured. Failure time for each temperature was determined using /spl Delta/S21=-1.0 dB measured at room temperature as the failure criteria. The activation energy (Ea) is 1.7 eV, achieving a projected median-time-to-failure (MTF) of 6/spl times/10/sup 9/ hours at a 125/spl deg/C junction temperature. This is the state-of-art of 0.1 /spl mu/m HEMT reliability based on S21 failure criteria of MMIC amplifiers under DC stress at high junction temperature in air ambient. This result demonstrates a robust HEMT technology which is immune to the stress effects of high electric field under high temperature operation, and demonstrates the suitability of the HEMTs for non-hermetic commercial applications.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128309569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics 具有高击穿和高功率特性的低噪声AlGaN/GaN modfet

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964384

S. Hsu, D. Pavlidis

引用次数: 16

Dual-band multi-mode power amplifier module using a third generation HBT technology 双频多模功率放大器模块采用第三代HBT技术

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964349

P. Savary, A. Girardot, G. Montoriol, F. Dupis, B. Thibaud, R. Jaoui, L. Chapoux, V. Esnault, L. Cornibert, O. Izumi, D. Hill, M. Sadaka, H. Henry, E. Yu, M. Tutt, M. Majerus, R. Uscola, F. Clayton, C. Rampley, S. Klingbeil, K. Rajagopalan, A. Mitra, A. Reyes

{"title":"Dual-band multi-mode power amplifier module using a third generation HBT technology","authors":"P. Savary, A. Girardot, G. Montoriol, F. Dupis, B. Thibaud, R. Jaoui, L. Chapoux, V. Esnault, L. Cornibert, O. Izumi, D. Hill, M. Sadaka, H. Henry, E. Yu, M. Tutt, M. Majerus, R. Uscola, F. Clayton, C. Rampley, S. Klingbeil, K. Rajagopalan, A. Mitra, A. Reyes","doi":"10.1109/GAAS.2001.964349","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964349","url":null,"abstract":"A heterojunction bipolar transistor (HBT) technology utilizing InGaP/GaAs and carbon-doped base has been established in Motorola's high-volume 6\" GaAs facility. The technology has been used to develop an integrated dual band (824-849 MHz and 1850-1910 MHz) power amplifier IC with multi-mode operation for 2.5G portable wireless. Both three-stage amplifiers have 30 dB gain, and provide an EDGE (8-PSK) signal at 28 dBm, an NADC signal at 30 dBm, and a GMSK signal at 32 dBm in their respective frequency bands, using a single 3.5 V source. All matching elements external to the chip are included in a low cost epoxy substrate which is 9/spl times/12/spl times/1.6 mm/sup 3/. Prospects of using this technology in W-CDMA applications have also been explored. A prototype achieves an ACPR of -41 dBc at 28 dBm output power with an efficiency of 36%.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"58 27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127039216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

A data-pattern independent clock and data recovery IC with a two-mode phase comparator 一种具有双模相位比较器的数据模式独立时钟和数据恢复集成电路

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964355

H. Nosaka, K. Ishii, T. Enoki

引用次数: 0

The challenge of GaAs IC manufacturing in Taiwan for Asian Pacific wireless market 台湾GaAs集成电路制造对亚太无线市场的挑战

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964336

L.W. Yang, P. Chao, L. Wu

引用次数: 1

An 850 nm wavelength monolithic integrated photoreceiver with a single-power-supplied transimpedance amplifier based on GaAs PHEMT technology 基于砷化镓PHEMT技术的850 nm波长单电源跨阻放大器单片集成光接收器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964348

Xian-jie Li, J. Ao, Rong Wang, Wei-Ji Liu, Zhigong Wang, Q. Zeng, Shiyong Liu, Chun-Guang Liang

引用次数: 6

A space-qualified, hermetically-sealed, Ka-band LNA with 2.0dB noise figure 符合空间要求的密封ka波段LNA，噪声系数为2.0dB

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964368

J. Sowers, M. Willis, T. Tieu, W. Findley, K. Hubbard

引用次数: 9

Low noise, high-speed InP/InGaAs HBTs 低噪声，高速InP/InGaAs HBTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964375

S. Hsu, D. Pavlidis

引用次数: 5

A 14-V/sub pp/ 10 Gbit/s E/O modulator driver IC 14v /sub / 10gbit /s E/O调制器驱动IC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964394

J. Carroll, C. Campbell

引用次数: 3

Recent advances in lithium battery technology 锂电池技术的最新进展

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964382

M.H. Miles

引用次数: 19