Dual-band multi-mode power amplifier module using a third generation HBT technology

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964349

P. Savary, A. Girardot, G. Montoriol, F. Dupis, B. Thibaud, R. Jaoui, L. Chapoux, V. Esnault, L. Cornibert, O. Izumi, D. Hill, M. Sadaka, H. Henry, E. Yu, M. Tutt, M. Majerus, R. Uscola, F. Clayton, C. Rampley, S. Klingbeil, K. Rajagopalan, A. Mitra, A. Reyes

{"title":"Dual-band multi-mode power amplifier module using a third generation HBT technology","authors":"P. Savary, A. Girardot, G. Montoriol, F. Dupis, B. Thibaud, R. Jaoui, L. Chapoux, V. Esnault, L. Cornibert, O. Izumi, D. Hill, M. Sadaka, H. Henry, E. Yu, M. Tutt, M. Majerus, R. Uscola, F. Clayton, C. Rampley, S. Klingbeil, K. Rajagopalan, A. Mitra, A. Reyes","doi":"10.1109/GAAS.2001.964349","DOIUrl":null,"url":null,"abstract":"A heterojunction bipolar transistor (HBT) technology utilizing InGaP/GaAs and carbon-doped base has been established in Motorola's high-volume 6\" GaAs facility. The technology has been used to develop an integrated dual band (824-849 MHz and 1850-1910 MHz) power amplifier IC with multi-mode operation for 2.5G portable wireless. Both three-stage amplifiers have 30 dB gain, and provide an EDGE (8-PSK) signal at 28 dBm, an NADC signal at 30 dBm, and a GMSK signal at 32 dBm in their respective frequency bands, using a single 3.5 V source. All matching elements external to the chip are included in a low cost epoxy substrate which is 9/spl times/12/spl times/1.6 mm/sup 3/. Prospects of using this technology in W-CDMA applications have also been explored. A prototype achieves an ACPR of -41 dBc at 28 dBm output power with an efficiency of 36%.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

Abstract

A heterojunction bipolar transistor (HBT) technology utilizing InGaP/GaAs and carbon-doped base has been established in Motorola's high-volume 6" GaAs facility. The technology has been used to develop an integrated dual band (824-849 MHz and 1850-1910 MHz) power amplifier IC with multi-mode operation for 2.5G portable wireless. Both three-stage amplifiers have 30 dB gain, and provide an EDGE (8-PSK) signal at 28 dBm, an NADC signal at 30 dBm, and a GMSK signal at 32 dBm in their respective frequency bands, using a single 3.5 V source. All matching elements external to the chip are included in a low cost epoxy substrate which is 9/spl times/12/spl times/1.6 mm/sup 3/. Prospects of using this technology in W-CDMA applications have also been explored. A prototype achieves an ACPR of -41 dBc at 28 dBm output power with an efficiency of 36%.

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双频多模功率放大器模块采用第三代HBT技术

利用InGaP/GaAs和碳掺杂基的异质结双极晶体管(HBT)技术已经在摩托罗拉的高产量6" GaAs设施中建立起来。该技术已用于开发具有多模式操作的2.5G便携式无线集成双频(824-849 MHz和1850-1910 MHz)功率放大器IC。两个三级放大器都具有30db增益，并在各自的频段内使用单个3.5 V源提供28dbm的EDGE (8-PSK)信号，30dbm的NADC信号和32dbm的GMSK信号。芯片外部的所有匹配元件都包含在低成本的环氧基板中，其尺寸为9/spl倍/12/spl倍/1.6 mm/sup 3/。并对该技术在W-CDMA中的应用前景进行了展望。一个原型在28 dBm输出功率下实现了-41 dBc的ACPR，效率为36%。

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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