Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics

Abstract

AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at 8.4 GHz at the same bias condition. In addition, a maximum breakdown voltage (V/sub BD/) of /spl sim/115 V at I/sub D/=20 /spl mu/A and I/sub G//spl sim/30 /spl mu/A was measured. A MODFET noise model and its correlation with gate leakage current are also investigated.