基于砷化镓PHEMT技术的850 nm波长单电源跨阻放大器单片集成光接收器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964348

Xian-jie Li, J. Ao, Rong Wang, Wei-Ji Liu, Zhigong Wang, Q. Zeng, Shiyong Liu, Chun-Guang Liang

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引用次数: 6

摘要

报道了一种基于0.8 /spl μ m损耗GaAs PHEMT技术的850 nm波长单电源跨阻放大器单片集成光接收器。该集成电路由一个MSM光电探测器和一个带50欧姆匹配差分输出的跨阻放大器组成。芯片上的MSM PD在3.5 V偏置下的暗电流为2.0 nA，响应率为0.30 a /W。TIA显示出超过58 dB/spl ω /的跨阻增益，-3 dB带宽为2.0 GHz。在+ 5v电源下，以1.25 Gbit/s和2.5 Gbit/s的比特率演示了睁眼图。

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An 850 nm wavelength monolithic integrated photoreceiver with a single-power-supplied transimpedance amplifier based on GaAs PHEMT technology

An 850 nm wavelength monolithic integrated photoreceiver with a novel single-power-supplied transimpedance amplifier is reported based on 0.8 /spl mu/m depleted GaAs PHEMT technology. The IC consists of an MSM photodetector and a transimpedance amplifier with a 50 ohm-matched differential output. The MSM PD on the chip shows a dark current of 2.0 nA as well as a responsivity of 0.30 A/W under a bias of 3.5 V. The TIA shows a transimpedance gain of more than 58 dB/spl Omega/ with a -3 dB bandwidth of 2.0 GHz. Opening eye diagrams are demonstrated at bit-rates of 1.25 Gbit/s and 2.5 Gbit/s under a +5 V supply.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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