Low noise, high-speed InP/InGaAs HBTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964375

S. Hsu, D. Pavlidis

引用次数: 5

Abstract

High frequency noise characteristics of InP/InGaAs HBTs with various emitter geometries were investigated. A minimum noise figure (F/sub min/) of 1.51 dB and associated gain (G/sub a/) of 9.6 dB at a frequency of 10 GHz and a DC power consumption of only 1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA) at 10 GHz were obtained. The dependence of noise characteristics on bias and geometry is also reported. The dominant noise sources in these HBTs were analyzed and an optimum emitter area of 1.2 /spl times/ 20 /spl mu/m/sup 2/ was found to present minimum noise figure and equivalent noise resistance.

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低噪声，高速InP/InGaAs HBTs

研究了不同发射极几何形状的InP/InGaAs HBTs的高频噪声特性。在10ghz频率下，最小噪声系数(F/sub min/)为1.51 dB，相关增益(G/sub A /)为9.6 dB，直流功耗仅为1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA)。本文还报道了噪声特性与偏压和几何形状的关系。结果表明，最佳的噪声源面积为1.2 /spl倍/ 20 /spl mu/m/sup 2/ /时，噪声系数最小，具有等效的抗噪能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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