发布求助
文献互助 智能选刊 最新文献

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)最新文献

筛选
英文 中文
Thermal impact of InGaAs on InP based HBTs InGaAs对InP基HBTs的热影响
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964390
M. Ray, D. Hill, O. Hartin, K. Johnson, P. Li
{"title":"Thermal impact of InGaAs on InP based HBTs","authors":"M. Ray, D. Hill, O. Hartin, K. Johnson, P. Li","doi":"10.1109/GAAS.2001.964390","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964390","url":null,"abstract":"Thermal characteristics of typical InP/InGaAs and InGaP/GaAs HBTs were compared by simulation. Parameters such as emitter dimensions, number of emitters, emitter pitch, and thickness of device layers were varied over ranges of interest. Despite the higher thermal conductivity of the InP substrate compared to GaAs, thermal resistance of InP/InGaAs HBTs was generally higher than that of comparable InGaP/GaAs HBTs because of the very low thermal conductivity of InGaAs. Approaches for minimizing this adverse effect are discussed.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129962807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A new flip-chip MMIC technology with multi-layer transmission line structure for low-cost W-band transceivers 低成本w波段收发器的多层传输线结构倒装MMIC新技术
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964360
S. Masuda, T. Hirose, S. Yokokawa, M. Nishi, S. Iijima, K. Ono, Y. Watanabe
{"title":"A new flip-chip MMIC technology with multi-layer transmission line structure for low-cost W-band transceivers","authors":"S. Masuda, T. Hirose, S. Yokokawa, M. Nishi, S. Iijima, K. Ono, Y. Watanabe","doi":"10.1109/GAAS.2001.964360","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964360","url":null,"abstract":"We developed for the first time a flip-chip multi-layer MMIC design technology that is based on thin-film inverted microstrip lines for use in low-cost W-band transceivers. This technology enables the minimization of chip size and the realization of a practical MMIC design, including the assembly issues in the W-band. A fabricated receiver amplifier occupying an area 1.5/spl times/0.35 mm experimentally achieved a gain of 27 dB and the transmitter power amplifier exhibited an output power of 14.5 dBm at 76 GHz, respectively. To our knowledge, this is the highest value ever reported at this frequency for a flip-chip multilayer MMIC amplifier.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125784387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Compound semiconductor physical device simulation for technology development at Motorola 摩托罗拉技术开发的化合物半导体物理器件模拟
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964369
O. Hartin, M. Ray, P. Li, K. Johnson
{"title":"Compound semiconductor physical device simulation for technology development at Motorola","authors":"O. Hartin, M. Ray, P. Li, K. Johnson","doi":"10.1109/GAAS.2001.964369","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964369","url":null,"abstract":"There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle time, and cycles of learning to achieve cost competitive III-V market leading technologies. Our methodology includes analytical analysis, calibration to measured data, parameter study, and optimization of DC, small signal AC, RF, and thermal performance. This methodology has been used in pHEMT, HBT, and HIGFET development Application development, such as the pHEMT-based RF switch, has also used device simulation heavily. The fundamentals of this methodology will be discussed and examples from the technology areas will be presented.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116842553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Super low noise InGaP gated PHEMT 超低噪声InGaP门控PHEMT
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 1900-01-01 DOI: 10.1109/GAAS.2001.964386
H. Huang, Y. Wang
{"title":"Super low noise InGaP gated PHEMT","authors":"H. Huang, Y. Wang","doi":"10.1109/GAAS.2001.964386","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964386","url":null,"abstract":"Very high performance InGaP/InGaAs/GaAs PHEMT is demonstrated. The fabricated InGaP gated PHEMT device with 0.25/spl times/160 /spl mu/m/sup 2/ of gate dimension shows a 304 mA/mm of saturation drain current at V/sub Gs/=0V, V/sub DS/=2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12 GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122444317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Over-40-Gb/s IC module technology using 8-mm-square leadless chip carrier packages mounted on four-layer resin printed circuit boards 超过40 gb /s的IC模块技术，采用8mm平方的无引线芯片载体封装，安装在四层树脂印刷电路板上
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 1900-01-01 DOI: 10.1109/GAAS.2001.964389
H. Sugahara, S. Kimura, K. Murata, E. Sano
{"title":"Over-40-Gb/s IC module technology using 8-mm-square leadless chip carrier packages mounted on four-layer resin printed circuit boards","authors":"H. Sugahara, S. Kimura, K. Murata, E. Sano","doi":"10.1109/GAAS.2001.964389","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964389","url":null,"abstract":"A key technology for realizing small, low-cost IC modules for over-40-Gb/s optical communication systems has been developed. The technology mainly features 8-mm-square leadless chip carrier (LCC) packages and four-layer resin printed circuit boards (PCBs). It was applied to build a prototype multichip 1:4 DEMUX module operating at 45 Gb/s.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128755050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信