低成本w波段收发器的多层传输线结构倒装MMIC新技术

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964360

S. Masuda, T. Hirose, S. Yokokawa, M. Nishi, S. Iijima, K. Ono, Y. Watanabe

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引用次数: 4

摘要

我们首次开发了一种基于薄膜反向微带线的倒装芯片多层MMIC设计技术，用于低成本w波段收发器。该技术可以使芯片尺寸最小化，实现实用的MMIC设计，包括w波段的组装问题。设计的接收放大器面积为1.5/spl倍/0.35 mm，实验增益为27 dB，发射功率放大器在76 GHz时的输出功率为14.5 dBm。据我们所知，这是有史以来在该频率上报道的倒装芯片多层MMIC放大器的最高值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new flip-chip MMIC technology with multi-layer transmission line structure for low-cost W-band transceivers

We developed for the first time a flip-chip multi-layer MMIC design technology that is based on thin-film inverted microstrip lines for use in low-cost W-band transceivers. This technology enables the minimization of chip size and the realization of a practical MMIC design, including the assembly issues in the W-band. A fabricated receiver amplifier occupying an area 1.5/spl times/0.35 mm experimentally achieved a gain of 27 dB and the transmitter power amplifier exhibited an output power of 14.5 dBm at 76 GHz, respectively. To our knowledge, this is the highest value ever reported at this frequency for a flip-chip multilayer MMIC amplifier.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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