超低噪声InGaP门控PHEMT

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 1900-01-01 DOI:10.1109/GAAS.2001.964386

H. Huang, Y. Wang

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引用次数: 8

摘要

展示了非常高性能的InGaP/InGaAs/GaAs PHEMT。所制备的栅极尺寸为0.25/spl倍/160 /spl μ /m/sup / 2/的InGaP门控PHEMT器件在V/sub g /=0V、V/sub DS/= 2v时的饱和漏极电流为304 mA/mm，外部跨导为320 mS/mm。12 GHz时的噪声系数为0.46 dB，相关增益为13 dB。具有这样的高增益和低噪声，漏极到栅极击穿可以高达10v。使用高选择性湿凹槽蚀刻工艺，可以实现4英寸晶圆上22 mV阈值电压的标准偏差。

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Super low noise InGaP gated PHEMT

Very high performance InGaP/InGaAs/GaAs PHEMT is demonstrated. The fabricated InGaP gated PHEMT device with 0.25/spl times/160 /spl mu/m/sup 2/ of gate dimension shows a 304 mA/mm of saturation drain current at V/sub Gs/=0V, V/sub DS/=2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12 GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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