InGaAs对InP基HBTs的热影响

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964390

M. Ray, D. Hill, O. Hartin, K. Johnson, P. Li

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引用次数: 4

摘要

通过仿真比较了典型的InP/InGaAs和InGaP/GaAs HBTs的热特性。诸如发射器尺寸、发射器数量、发射器间距和器件层厚度等参数在感兴趣的范围内变化。尽管InP衬底的热导率比GaAs高，但由于InGaAs的热导率非常低，InP/InGaAs HBTs的热阻通常高于同类InGaP/GaAs HBTs。讨论了尽量减少这种不利影响的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal impact of InGaAs on InP based HBTs

Thermal characteristics of typical InP/InGaAs and InGaP/GaAs HBTs were compared by simulation. Parameters such as emitter dimensions, number of emitters, emitter pitch, and thickness of device layers were varied over ranges of interest. Despite the higher thermal conductivity of the InP substrate compared to GaAs, thermal resistance of InP/InGaAs HBTs was generally higher than that of comparable InGaP/GaAs HBTs because of the very low thermal conductivity of InGaAs. Approaches for minimizing this adverse effect are discussed.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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