具有高击穿和高功率特性的低噪声AlGaN/GaN modfet

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964384

S. Hsu, D. Pavlidis

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引用次数: 16

摘要

对具有低噪声、高击穿和功率特性的AlGaN/GaN modfet (0.25/spl倍/200 /spl μ /m/sup 2/)进行了评价。在I/sub DS/=30 mA的静息点处，噪声系数为1.9 dB，相关增益为16.2 dB。在10ghz时V/sub DS/=10。在相同偏置条件下，测量到的最大功率为22.9 dBm (/spl sim/1 W/mrn)，在8.4 GHz时PAE为21.9%。此外，在I/sub D/=20 /spl mu/ a和I/sub G//spl sim/30 /spl mu/ a时测得的最大击穿电压(V/sub BD/)为/spl sim/115 V。研究了MODFET噪声模型及其与栅极漏电流的关系。

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Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics

AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at 8.4 GHz at the same bias condition. In addition, a maximum breakdown voltage (V/sub BD/) of /spl sim/115 V at I/sub D/=20 /spl mu/A and I/sub G//spl sim/30 /spl mu/A was measured. A MODFET noise model and its correlation with gate leakage current are also investigated.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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