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A GaAs MMIC Single-Chip RF-MEMS Switched Tunable LNA 一种GaAs MMIC单片RF-MEMS开关可调谐LNA
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659199
R. Malmqvist, C. Samuelsson, S. Reyaz, A. Gustafsson, S. Seok, M. Fryziel, P. Rolland, B. Grandchamp, R. Baggen
{"title":"A GaAs MMIC Single-Chip RF-MEMS Switched Tunable LNA","authors":"R. Malmqvist, C. Samuelsson, S. Reyaz, A. Gustafsson, S. Seok, M. Fryziel, P. Rolland, B. Grandchamp, R. Baggen","doi":"10.1109/CSICS.2013.6659199","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659199","url":null,"abstract":"This paper presents a novel compact circuit design of an RF-MEMS frequency-agile LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The uncapped/BCB capped single-chip GaAs MEMS tunable LNA circuits which can be matched at different frequency bands (e.g at X-band and Ku-/K-band) present similar in-band gain, linearity and noise figure over 30-60% wide tuning ranges (the uncapped MEMS tunable LNA has an NF≤3 dB at 14-21 GHz with ≤0.6 dB higher NF at 9-13 GHz). The validated MMIC designs are first time realizations of uncapped/0-level packaged MEMS tunable (wide-band/narrow-band) LNAs in a GaAs foundry process.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130045251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress 基于剪切应力的可靠AlGaN/GaN HEMT结构设计数值装置模型
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659242
M. Hirose, K. Matsushita, K. Takagi, K. Tsuda
{"title":"Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress","authors":"M. Hirose, K. Matsushita, K. Takagi, K. Tsuda","doi":"10.1109/CSICS.2013.6659242","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659242","url":null,"abstract":"A numerical device model is proposed for the design of reliable AlGaN/GaN HEMT structures. In the model, shear stress due to the inverse piezoelectric effect is used to predict high-temperature DC stress test results. The calculated shear stress is compared with test results for various AlGaN/GaN HEMT structures. The comparison shows that structures passing the test have shear stress lower than 0.19 GPa under the test conditions. An AlGaN/GaN HEMT structure for the Ka band was designed so that stress would be lower than this value. The designed structure was fabricated and passed the test. These results indicate that the model can be used to design reliable AlGaN/GaN HEMT structures.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124376437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Linearity Improvement of GaN HEMT for RF Power Amplifiers 射频功率放大器用GaN HEMT线性度的改进
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659235
Kazutaka Inoue, Hiroshi Yamamoto, K. Nakata, Fumio Yamada, Takashi Yamamoto, S. Sano
{"title":"Linearity Improvement of GaN HEMT for RF Power Amplifiers","authors":"Kazutaka Inoue, Hiroshi Yamamoto, K. Nakata, Fumio Yamada, Takashi Yamamoto, S. Sano","doi":"10.1109/CSICS.2013.6659235","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659235","url":null,"abstract":"The linearity has become more important to expand GaN HEMTs into microwave amplifier markets. This paper describes the outline of the large signal model of our 0.4μm AlGaN/GaN HEMT, considering the pulse biased 24 V operation. The analysis which utilizes the constructed Angelov model proved that the intermodulation distortion (IMD) of more than 10 dB backed off region is determined by the sub-threshold gm profile, namely steep rising gm profile degrades IMD. Thus, we proposed a thin n-GaN layer inserted buffer structure (ini-buffer), which realizes the significant IMD improvement of 8 dB, in the backed-off region.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"294 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114055866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Pure Play GaN Foundry 0.25µm HEMT Technology for RF Applications 用于射频应用的纯GaN铸造0.25µm HEMT技术
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659243
M. Weng, Che-Kai Lin, Jhih-Han Du, Wei-Chou Wang, Wen-Kai Wang, W. Wohlmuth
{"title":"Pure Play GaN Foundry 0.25µm HEMT Technology for RF Applications","authors":"M. Weng, Che-Kai Lin, Jhih-Han Du, Wei-Chou Wang, Wen-Kai Wang, W. Wohlmuth","doi":"10.1109/CSICS.2013.6659243","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659243","url":null,"abstract":"This paper presents the development of a newly available short gate length 0.25μm GaN HEMT technology and focuses on fabrication, process control, RF characterization and DC reliability. Our pure play Foundry services support discrete and RF applications with detailed specifications and wafer acceptance tests. The analysis of load-pull measurements of S- through X-band and DC reliability allow designers to create applications utilizing supply voltages up to 28V, with power density of 4W/mm, PAE of 45%, and large signal linear gain of 15dB at 10GHz based on continuous-wave on-wafer measurements without harmonic terminations. Improved power density of >5W/mm, PAE of 57.3% and linear gain of 20.1dB at S-band are measured under pulsed conditions using a 2.5μsec pulse at 1% duty cycle. Reliability performances focused on HTOL and HTRB are presented.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"322 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115918618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
GaN Transistors - The Best Emerging Technology for Power Conversion from DC through RF 氮化镓晶体管——从直流到射频功率转换的最佳新兴技术
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659230
A. Lidow
{"title":"GaN Transistors - The Best Emerging Technology for Power Conversion from DC through RF","authors":"A. Lidow","doi":"10.1109/CSICS.2013.6659230","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659230","url":null,"abstract":"It has been three years since the first gallium nitride transistors were delivered as power MOSFET replacements in a commercial power conversion application. Since that time there has been major interest, and rapid progress in the development and commercialization of this new technology. In this paper we will give an update on GaN technology, its performance compared with power MOSFETs and LDMOS RF transistors, as well as the status of \"early adopters\" in the world of power conversion.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130016572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 2×44Gb/s 110-GHz Wireless Transmitter with Direct Amplitude and Phase Modulation in 45-nm SOI CMOS 45纳米SOI CMOS直接调幅和相位调制的2×44Gb/s 110 ghz无线发射机
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659188
A. Balteanu, S. Shopov, S. Voinigescu
{"title":"A 2×44Gb/s 110-GHz Wireless Transmitter with Direct Amplitude and Phase Modulation in 45-nm SOI CMOS","authors":"A. Balteanu, S. Shopov, S. Voinigescu","doi":"10.1109/CSICS.2013.6659188","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659188","url":null,"abstract":"This paper investigates the maximum Baud rate and the scalability to the W-Band of the mm-wave IQ power-DAC transmitter architecture. A 45-nm SOI CMOS implementation achieves 44-Gbps BPSK and 88-Gbps BPSK+OOK modulation rates at 100-110 GHz with energy efficiency of 9.4 pJ/bit and output powers ranging from 8.6 to 11.7 dBm.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124707490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A 227.5GHz InP HBT SSPA MMIC with 101mW Pout at 14.0dB Compressed Gain and 4.04% PAE 一个227.5GHz InP HBT SSPA MMIC，输出101mW，压缩增益14.0dB, PAE 4.04%
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659190
Z. Griffith, M. Urteaga, P. Rowell, R. Pierson
{"title":"A 227.5GHz InP HBT SSPA MMIC with 101mW Pout at 14.0dB Compressed Gain and 4.04% PAE","authors":"Z. Griffith, M. Urteaga, P. Rowell, R. Pierson","doi":"10.1109/CSICS.2013.6659190","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659190","url":null,"abstract":"A 214-230GHz solid-state power amplifier (SSPA) MMIC is presented, where at 227.5GHz it simultaneously demonstrates 101mW P,out at 14.0dB compressed gain (4.0mW P,in), with 4.04% PAE - these record SSPA MMIC values represent increases to state-of-the-art by 12% for P,out and 2.3× for PAE at these frequencies in an HBT technology. The maximum compressed Pout is 103mW at 13.1dB gain (5.0mW P,in) and 4.08% PAE. This 2-stage amplifier has 19-21dB S21 gain from 214-235GHz, with 3-dB S21 bandwidth of 240GHz. P,DC is 2.40W. Amplifier cells were fabricated from a 250nm InP HBT technology, jointly with a substrate-shielded, thin-film microstrip wiring environment using BCB. The 80-103mW P,out (214-230GHz) is achieved by 8-way (4-way × 2-way) combining eight cascode cells. Due to the gain of the cascode cell being 10-11dB, a four cascode cell combined predriver could be used to drive the amplifier output stage into saturation - this reduces to SSPA PDC and improves PAE. Across the SSPA bandwidth, the 2:1 and 4:1 power dividers/combiners exhibit only 0.4dB and 0.5dB loss respectively.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126144613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Double Recessed GaAs pHEMTs for 20-50 V Power Switching 用于20- 50v电源开关的双凹槽GaAs phemt
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659223
V. Pala, M. Hella, T. Chow
{"title":"Double Recessed GaAs pHEMTs for 20-50 V Power Switching","authors":"V. Pala, M. Hella, T. Chow","doi":"10.1109/CSICS.2013.6659223","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659223","url":null,"abstract":"A normally-OFF RF pHEMT process is optimized for a blocking voltage in the 20-50V range for power switching ICs. Due to their superior material properties, the intrinsic figure of merit for pHEMT switching devices show an order of magnitude improvement over the state-of-the-art Silicon NMOS transistors and in the same range as lateral GaN HEMTs. In a scenario where innovations in silicon based low voltage power transistors have saturated, this approach is a new way of breaking the paradigm and making large leaps in performance.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122365168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Total Bandwidth Expanded Dual-Band GaN Doherty PA toward the LTE-A Carrier Aggregation Application 面向LTE-A载波聚合应用的全带宽扩展双带GaN Doherty PA
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659208
M. Hayakawa, Kazumi Shiikuma, T. Kaneko
{"title":"A Total Bandwidth Expanded Dual-Band GaN Doherty PA toward the LTE-A Carrier Aggregation Application","authors":"M. Hayakawa, Kazumi Shiikuma, T. Kaneko","doi":"10.1109/CSICS.2013.6659208","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659208","url":null,"abstract":"This paper presents a new theoretical concept, design implementation and experimental results of a compact dual-band GaN-HEMT Doherty power amplifier (DPA) with broad bandwidths. Measured results well agree with simulation. Small signal 3 dB bandwidths at 700 MHz band and 2.1 GHz band are 300MHz and 450 MHz, respectively. Total bandwidth of 750 MHz which covers the IM3 bandwidth of LTE-A signal is achieved. Drain efficiency at 6 dB back off exceeds 43% over 100 MHz bandwidths at both bands. The fabricated dual-band DPA is 135 × 65 mm2.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132860695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications 微波、毫米波和亚毫米波应用的变质HEMT技术
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659237
J. Komiak, Phillip M. Smith, K. Duh, Dong Xu, P. Chao
{"title":"Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications","authors":"J. Komiak, Phillip M. Smith, K. Duh, Dong Xu, P. Chao","doi":"10.1109/CSICS.2013.6659237","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659237","url":null,"abstract":"This paper reviews recent progress in the development of GaAs Metamorphic HEMT (MHEMT) technology for microwave, millimeter-wave, and submillimeter-wave applications. Short gate-length (50-100 nm) Metamorphic High Electron Mobility Transistors have been optimized for high gain and low noise performance. Efforts to further improve performance, manufacturability, and verify reliability will be reported. We also describe the design and performance of low noise MMIC amplifiers based on this technology.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122693032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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