A Total Bandwidth Expanded Dual-Band GaN Doherty PA toward the LTE-A Carrier Aggregation Application

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659208

M. Hayakawa, Kazumi Shiikuma, T. Kaneko

引用次数: 5

Abstract

This paper presents a new theoretical concept, design implementation and experimental results of a compact dual-band GaN-HEMT Doherty power amplifier (DPA) with broad bandwidths. Measured results well agree with simulation. Small signal 3 dB bandwidths at 700 MHz band and 2.1 GHz band are 300MHz and 450 MHz, respectively. Total bandwidth of 750 MHz which covers the IM3 bandwidth of LTE-A signal is achieved. Drain efficiency at 6 dB back off exceeds 43% over 100 MHz bandwidths at both bands. The fabricated dual-band DPA is 135 × 65 mm2.

查看原文本刊更多论文

面向LTE-A载波聚合应用的全带宽扩展双带GaN Doherty PA

本文提出了一种新的理论概念、设计实现和实验结果，实现了一种紧凑型宽频双频段GaN-HEMT Doherty功率放大器。实测结果与模拟结果吻合较好。700mhz频段和2.1 GHz频段的小信号3db带宽分别为300MHz和450mhz。总带宽达到750mhz，覆盖LTE-A信号的IM3带宽。在两个频带的100mhz带宽上，6db回退时的漏极效率超过43%。制作的双频DPA尺寸为135 × 65 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量