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A SiGe BiCMOS W-Band LNA with 5.1 dB NF at 90 GHz 在90 GHz时具有5.1 dB NF的SiGe BiCMOS w波段LNA
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659207
Yang Yang, Seyhmus Cacina, Gabriel M. Rebeiz
{"title":"A SiGe BiCMOS W-Band LNA with 5.1 dB NF at 90 GHz","authors":"Yang Yang, Seyhmus Cacina, Gabriel M. Rebeiz","doi":"10.1109/CSICS.2013.6659207","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659207","url":null,"abstract":"This paper presents a W-band low-noise amplifier using an advanced 90nm SiGe BiCMOS technology. The 4-stage common-emitter amplifier results in a gain of 18-19 dB at 90-100 GHz with a 3-dB bandwidth of 75-105 GHz. The measured noise figure is <; 6.5 dB from 85-100 GHz and with a minimum of 5.1 dB at 90 GHz averaged over four different chips. An input P1dB of -20 dBm and an output P1dB/Psat of -3/+2.1 dBm was achieved at 90 GHz, with a power consumption of 43 mW. To our knowledge, this represents the lowest noise W-band amplifier to-date using silicon technologies.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125380533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
High Efficiency PA Design Strategy at X-Band x波段高效PA设计策略
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659232
M. Haynes, P. Tasker, S. Cripps
{"title":"High Efficiency PA Design Strategy at X-Band","authors":"M. Haynes, P. Tasker, S. Cripps","doi":"10.1109/CSICS.2013.6659232","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659232","url":null,"abstract":"There is an growing demand for high efficiency power amplifiers at high frequencies, X-band and above. It is well understood that design strategies targeting high efficiency requires output IV waveform engineering; switching the mode of device operation from the Class A or AB modes to the Class B or C modes. Unfortunately, this mode switch results in a significant reduction in gain, which since the maximum amount of gain at high frequencies is limited, can result in degraded rather than enhanced power added efficiency. An improved design strategy, incorporating input IV waveform engineering, can be used to minimize this gain reduction thus providing for improved power added efficiency.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126083257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Advanced Packaging and Thermal Management for High Power Density GaN Devices 高功率密度GaN器件的先进封装和热管理
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659211
Yuan Zhao, T. Semenic, A. Bhunia
{"title":"Advanced Packaging and Thermal Management for High Power Density GaN Devices","authors":"Yuan Zhao, T. Semenic, A. Bhunia","doi":"10.1109/CSICS.2013.6659211","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659211","url":null,"abstract":"Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are thermally limited much below the electrical capability of the devices. The unique challenge of a GaN HEMT is its ultra-high heat flux at the micro-scale gate fingers, which cannot be effectively and adequately addressed by conventional packaging and thermal management systems and lead to a large junction-to-ambient thermal resistance. A novel thermal interface material (TIM) that offers unique heat spreading, CTE compliance and ultra-high thermal performance was developed. The new TIM enables attaching GaN die directly onto a copper carrier. The heat spreading feature of the TIM can effectively dissipate heat near junction and greatly reduce the maximum heat flux, which leads to smaller temperature difference across each layer underneath of the TIM. A preliminary demonstration of the technology on a GaN-on-Silicon device shows 50% higher heat dissipation capability, compared to the state-of-the-art pin fin cold plate liquid cooling, while maintaining the device junction temperature at 150°C.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124071078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process 一种0.12µm SiGe BiCMOS工艺的q波段/ w波段双频功率放大器
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659206
Po-Yi Wu, J. Buckwalter
{"title":"A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process","authors":"Po-Yi Wu, J. Buckwalter","doi":"10.1109/CSICS.2013.6659206","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659206","url":null,"abstract":"A three-stage dual-band power amplifier is demonstrated in 0.12 um silicon germanium (SiGe) BiCMOS process at both Q-band and W-band. The first two stages are pseudo-differential pre-amplifiers with a high-impedance dual-band load. The final stage is a single-ended power amplifier with an appropriate impedance to produce output power. The collector-emitter junction breakdown voltage of the amplifier is extended with a low-impedance base current biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 15% with 14 dBm maximum saturated power (Psat) at 43 GHz and 9 dBm Psat at 82 GHz. The effective chip area is 1mm2 including input and output RF GSG pads.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129124375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 107 GHz 55 dB-Ohm InP Broadband Transimpedance Amplifier IC for High-Speed Optical Communication Links 一种用于高速光通信链路的107 GHz 55 dB-Ohm InP宽带跨阻放大器IC
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659184
E. Bloch, Hyun-Chul Park, Z. Griffith, M. Urteaga, D. Ritter, M. Rodwell
{"title":"A 107 GHz 55 dB-Ohm InP Broadband Transimpedance Amplifier IC for High-Speed Optical Communication Links","authors":"E. Bloch, Hyun-Chul Park, Z. Griffith, M. Urteaga, D. Ritter, M. Rodwell","doi":"10.1109/CSICS.2013.6659184","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659184","url":null,"abstract":"We report a 107 GHz baseband differential transimpedance amplifier IC for high speed optical communication links. The amplifier, comprised of two Darlington resistive feedback stages, was implemented in a 500 nm InP HBT process and demonstrates 55 dBΩ differential transimpedance gain, 30 ps group delay, P1dB = 1 dBm, and is powered by a 5.2 V supply. Differential input and output impedances are 50Ω. The IC interfaces to -2V DC at the input for connections to high-speed photodiodes and -450 mV DC at the output for interfaces to Gilbert-cell mixers and to ECL logic.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129276942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Best Practices for System Level ESD Testing of Semiconductor Components 半导体元件系统级ESD测试的最佳实践
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659220
K. Muhonen
{"title":"Best Practices for System Level ESD Testing of Semiconductor Components","authors":"K. Muhonen","doi":"10.1109/CSICS.2013.6659220","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659220","url":null,"abstract":"Electrostatic discharge (ESD) testing of integrated circuits (ICs) is necessary to ensure products can withstand several types of ESD threats including those encountered in the factory and in the field. This paper discusses the testing of components with electrostatic stress waveforms that were originally designed for predicting system failures in the field. IC manufacturers are struggling to obtain reliable data when applying system tests to their components because of interface, implementation and equipment repeatability problems found with this form of evaluation. This paper highlights the best practices for system level ESD testing despite these hurdles.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125723881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Achieving the Best Thermal Performance for GaN-on-Diamond 实现金刚石上氮化镓的最佳热性能
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659210
J. Pomeroy, M. Bernardoni, A. Sarua, A. Manoi, D. Dumka, D. Fanning, Martin Kuball
{"title":"Achieving the Best Thermal Performance for GaN-on-Diamond","authors":"J. Pomeroy, M. Bernardoni, A. Sarua, A. Manoi, D. Dumka, D. Fanning, Martin Kuball","doi":"10.1109/CSICS.2013.6659210","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659210","url":null,"abstract":"GaN-based RF transistors offer impressive power densities, although to achieve the maximum potential offered by GaN, thermal management must be improved beyond the current GaN-on-SiC devices. By using diamond, rather than SiC substrates, transistor thermal resistance can be significantly reduced. It is important to experimentally verify thermal resistance, rather than relying solely on simulation expectations, using measurement results to aid further optimization. The novel thermal characterization methodology presented here combines Raman thermography and simulation to determine the substrate thermal conductivity and GaN/substrate thermal resistance in GaN-on-diamond devices. Measured GaN-on-diamond interfacial thermal resistance is similar to reported values for GaN-on-SiC, whereas the diamond substrate thermal conductivity is substantially higher, resulting in a significantly improved thermal resistance with respect to GaN-on-SiC, with great potential for further improvement.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133878593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications 用于高分辨率亚毫米波雷达应用的单片集成mHEMT芯片组
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659203
A. Tessmann, A. Leuther, H. Massler, U. Lewark, S. Wagner, R. Weber, M. Kuri, M. Zink, M. Riessle, H. Stulz, M. Schlechtweg, O. Ambacher, R. Sommer, A. Wahlen, S. Stanko
{"title":"A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications","authors":"A. Tessmann, A. Leuther, H. Massler, U. Lewark, S. Wagner, R. Weber, M. Kuri, M. Zink, M. Riessle, H. Stulz, M. Schlechtweg, O. Ambacher, R. Sommer, A. Wahlen, S. Stanko","doi":"10.1109/CSICS.2013.6659203","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659203","url":null,"abstract":"In this paper, we present the development of a millimeter-wave monolithic integrated circuit (MMIC) chipset for use in a high-resolution radar system operating at 300 GHz. The chipset consists of a frequency multiplier by twelve, a medium power amplifier, a high power amplifier and a fully integrated 300 GHz heterodyne receiver MMIC. The frequency multiplier and the two amplifier circuits have been realized using a 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology and achieve a saturated output power of approximately 20 dBm between 90 and 105 GHz. The 300 GHz receiver S-MMIC was fabricated using a more advanced 35 nm mHEMT technology and demonstrates a conversion gain of more than 7 dB between 270 and 325 GHz. All circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a compact 300 GHz radar demonstrator, which delivers an instantaneous bandwidth of 40 GHz together with an outstanding range resolution of 3.7 mm.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132247342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Nanocrystalline Diamond for near Junction Heat Spreading in GaN Power HEMTs 纳米晶金刚石用于氮化镓功率hemt的近结热扩散
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659241
T. Anderson, K. Hobart, M. Tadjer, A. Koehler, T. Feygelson, J. Hite, B. Pate, F. Kub, C. Eddy
{"title":"Nanocrystalline Diamond for near Junction Heat Spreading in GaN Power HEMTs","authors":"T. Anderson, K. Hobart, M. Tadjer, A. Koehler, T. Feygelson, J. Hite, B. Pate, F. Kub, C. Eddy","doi":"10.1109/CSICS.2013.6659241","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659241","url":null,"abstract":"Reduced performance in Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed \"gate after diamond,\" is shown to improve the thermal budget of the deposition process and enable large-area diamond without degrading the gate metal. Nanocrystalline (NCD)-capped devices had 20% lower channel temperature at equivalent power dissipation. Improved electrical characteristics were observed, notably improved on-resistance and breakdown voltage, and reduced gate leakage. Further refinements to the NCD growth process have enabled deposition directly on the GaN surface. Pulsed I-V measurements indicate a comparable passivation effect to conventional SiNx-capped devices.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121037395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm 200- 245ghz平衡倍频器，峰值输出功率+ 2dbm
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659189
Hsin-chang Lin, Gabriel M. Rebeiz
{"title":"A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm","authors":"Hsin-chang Lin, Gabriel M. Rebeiz","doi":"10.1109/CSICS.2013.6659189","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659189","url":null,"abstract":"This paper presents a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2 dBm at 200-245 GHz with a peak value of +2 dBm at 224-228 GHz and a conversion gain of -15 dB. To the author's knowledge, this is the highest power wideband doubler at 200-250 GHz.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126167139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
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