{"title":"在90 GHz时具有5.1 dB NF的SiGe BiCMOS w波段LNA","authors":"Yang Yang, Seyhmus Cacina, Gabriel M. Rebeiz","doi":"10.1109/CSICS.2013.6659207","DOIUrl":null,"url":null,"abstract":"This paper presents a W-band low-noise amplifier using an advanced 90nm SiGe BiCMOS technology. The 4-stage common-emitter amplifier results in a gain of 18-19 dB at 90-100 GHz with a 3-dB bandwidth of 75-105 GHz. The measured noise figure is <; 6.5 dB from 85-100 GHz and with a minimum of 5.1 dB at 90 GHz averaged over four different chips. An input P1dB of -20 dBm and an output P1dB/Psat of -3/+2.1 dBm was achieved at 90 GHz, with a power consumption of 43 mW. To our knowledge, this represents the lowest noise W-band amplifier to-date using silicon technologies.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"A SiGe BiCMOS W-Band LNA with 5.1 dB NF at 90 GHz\",\"authors\":\"Yang Yang, Seyhmus Cacina, Gabriel M. Rebeiz\",\"doi\":\"10.1109/CSICS.2013.6659207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a W-band low-noise amplifier using an advanced 90nm SiGe BiCMOS technology. The 4-stage common-emitter amplifier results in a gain of 18-19 dB at 90-100 GHz with a 3-dB bandwidth of 75-105 GHz. The measured noise figure is <; 6.5 dB from 85-100 GHz and with a minimum of 5.1 dB at 90 GHz averaged over four different chips. An input P1dB of -20 dBm and an output P1dB/Psat of -3/+2.1 dBm was achieved at 90 GHz, with a power consumption of 43 mW. To our knowledge, this represents the lowest noise W-band amplifier to-date using silicon technologies.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"113 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a W-band low-noise amplifier using an advanced 90nm SiGe BiCMOS technology. The 4-stage common-emitter amplifier results in a gain of 18-19 dB at 90-100 GHz with a 3-dB bandwidth of 75-105 GHz. The measured noise figure is <; 6.5 dB from 85-100 GHz and with a minimum of 5.1 dB at 90 GHz averaged over four different chips. An input P1dB of -20 dBm and an output P1dB/Psat of -3/+2.1 dBm was achieved at 90 GHz, with a power consumption of 43 mW. To our knowledge, this represents the lowest noise W-band amplifier to-date using silicon technologies.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
