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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

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A Low Power Quad 25.78-Gbit/s 2.5 V Laser Diode Driver Using Shunt-Driving in 0.18 µm SiGe-BiCMOS 采用0.18µm SiGe-BiCMOS并联驱动的低功耗四元25.78 gbit /s 2.5 V激光二极管驱动器
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659201
A. Moto, T. Ikagawa, Shunsuke Sato, Y. Yamasaki, Y. Onishi, Keiji Tanaka
{"title":"A Low Power Quad 25.78-Gbit/s 2.5 V Laser Diode Driver Using Shunt-Driving in 0.18 µm SiGe-BiCMOS","authors":"A. Moto, T. Ikagawa, Shunsuke Sato, Y. Yamasaki, Y. Onishi, Keiji Tanaka","doi":"10.1109/CSICS.2013.6659201","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659201","url":null,"abstract":"We report on circuit design and measurement results of the newly developed quad 25.78-Gbit/s laser diode driver, fabricated by 0.18 μm SiGe-BiCMOS (ft/fmax =200/200 GHz). Power dissipation of the laser diode driver is only 40 mW/lane and 190 mW/lane including a laser bias current when the DFB laser is driven under 2.5 V supply. This IC is co-packaged with laser diodes in small size transmitter optical subassembly. We confirm excellent optical waveform, which is compliant with 100GBASE-LR4 optical eye specifications in IEEE802.ba.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130002430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Semiconductor Material and Device Characterization via Scanning Microwave Microscopy 用扫描微波显微镜表征半导体材料和器件
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659245
H. Tanbakuchi, F. Kienberger, M. Richter, M. Dieudonne, M. Kasper, G. Gramse
{"title":"Semiconductor Material and Device Characterization via Scanning Microwave Microscopy","authors":"H. Tanbakuchi, F. Kienberger, M. Richter, M. Dieudonne, M. Kasper, G. Gramse","doi":"10.1109/CSICS.2013.6659245","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659245","url":null,"abstract":"The advent of the new nano-scale high speed materials and devices require metrology tools capable of characterization at the operating frequency range with nano-scale resolution. The non-destructive measurement of dopant profile and carrier concentration in 2D and 3D are critical in the new emerging materials and devices such as carbon nanotubes, graphene, nanowires and spintronics. A new Scanning Microwave Microscope (SMM) has been developed to characterize the material and devices at microwave frequencies with nanometer resolution. The SMM has been shown to be capable of quantitative characterization of metals, semiconductors and dielectrics.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121145211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Selective Growth of Diamond in Thermal Vias for GaN HEMTs GaN hemt热孔中金刚石的选择性生长
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659244
B. Poust, V. Gambin, R. Sandhu, I. Smorchkova, G. Lewis, R. Elmadjian, Danny Li, C. Geiger, B. Heying, M. Wojtowicz, A. Oki, B. Pate, T. Feygelson, K. Hobart
{"title":"Selective Growth of Diamond in Thermal Vias for GaN HEMTs","authors":"B. Poust, V. Gambin, R. Sandhu, I. Smorchkova, G. Lewis, R. Elmadjian, Danny Li, C. Geiger, B. Heying, M. Wojtowicz, A. Oki, B. Pate, T. Feygelson, K. Hobart","doi":"10.1109/CSICS.2013.6659244","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659244","url":null,"abstract":"GaN on SiC technology has offered tremendous benefits over existing GaAs-based RF technologies. The high breakdown voltage and current handling capability of GaN HEMTs enable a 10x increase in RF power over conventional GaAs- based devices for the same device size. These benefits translate to dramatically improved performance for military and commercial communications, radar and high-power RF systems. However, despite the high thermal conductivity materials and optimized epitaxial profiles already being used, additional improvement of MMIC performance is limited by thermal constraints. Substrate and near channel thermal resistance is a key thermal bottleneck limiting device compaction and junction temperature reduction. NGAS will report on revolutionary methods being developed to directly integrate high quality, high thermal conductivity diamond materials with more than 4x greater thermal conductivity over existing state-of-the-art GaN on SiC HEMT technology. Reducing temperature in the device channel and surrounding regions is critical for reliable operation, supporting additional device compaction and improving circuit performance.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"30 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129354819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
30% PAE W-Band InP Power Amplifiers Using Sub-Quarter-Wavelength Baluns for Series-Connected Power-Combining 采用亚四分之一波长平衡器进行串联功率组合的30% PAE w波段InP功率放大器
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659182
Hyun-Chul Park, S. Daneshgar, J. Rode, Z. Griffith, M. Urteaga, Byung-sung Kim, M. Rodwell
{"title":"30% PAE W-Band InP Power Amplifiers Using Sub-Quarter-Wavelength Baluns for Series-Connected Power-Combining","authors":"Hyun-Chul Park, S. Daneshgar, J. Rode, Z. Griffith, M. Urteaga, Byung-sung Kim, M. Rodwell","doi":"10.1109/CSICS.2013.6659182","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659182","url":null,"abstract":"We present high-efficiency W-band power amplifier (PA) ICs with a new series-connected power combining technique using sub-quarter-wavelength transmission- line baluns. The PAs are implemented in a 0.25μm InP HBT process. At 86GHz, a single-stage PA exhibits 30.4% peak PAE, 20.37dBm Pout and 23GHz 3dB bandwidth. A two-stage PA exhibits 30.2% PAE, and 23.14dBm Pout. These values of PAE represent a 1.2:1 improvement in the state-of-the-art for E- and W- band PAs having similar RF output powers.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129659042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Ka-Band High Power GaN SPDT Switch MMIC ka波段大功率GaN SPDT开关MMIC
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659234
Xiaosu Zheng, John C. Tremblay, S. Huettner, K. Ip, Thomas Papale, Krista L. Lange
{"title":"Ka-Band High Power GaN SPDT Switch MMIC","authors":"Xiaosu Zheng, John C. Tremblay, S. Huettner, K. Ip, Thomas Papale, Krista L. Lange","doi":"10.1109/CSICS.2013.6659234","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659234","url":null,"abstract":"A Ka-Band high power GaN/SiC reflective SPDT Switch MMIC is demonstrated with unprecedented 49dBm P1dB and at least 58dBm survival threshold. The key enabling semiconductor technology is Raytheon's mm-Wave GaN HEMT with 1.36 ohm-mm Ron and 0.131 pF/mm Coff. Measured insertion loss is better than 1.3 dB over 27-31 GHz, and the minimum insertion loss of 0.8 dB has achieved at higher frequencies. Measured isolation is greater than 25 dB over 27-31 GHz, with the highest isolation of 30 dB at higher frequencies.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127634136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Cooling Limits for GaN HEMT Technology GaN HEMT技术的冷却极限
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659222
Y. Won, Jungwan Cho, D. Agonafer, M. Asheghi, K. Goodson
{"title":"Cooling Limits for GaN HEMT Technology","authors":"Y. Won, Jungwan Cho, D. Agonafer, M. Asheghi, K. Goodson","doi":"10.1109/CSICS.2013.6659222","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659222","url":null,"abstract":"The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121478166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
Base Resistance Scaling for Transistors of Various Geometries 各种几何形状晶体管的基极电阻缩放
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659218
Yingying Yang, P. Zampardi
{"title":"Base Resistance Scaling for Transistors of Various Geometries","authors":"Yingying Yang, P. Zampardi","doi":"10.1109/CSICS.2013.6659218","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659218","url":null,"abstract":"Base resistance is an important parameter for bipolar transistor performance and modeling. It can be calculated from simple inputs: base sheet resistance, geometries, and contact metal characteristic impedance. Because a variety of device geometries are used, it is useful to develop scaling equations for different transistor geometries. In this work, we develop generalized equations for the base resistance of multi-finger rectangular devices, ring devices, and horseshoe devices.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130575061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Transistor Laser for Electronic-Photonic Integrated Circuits 电子-光子集成电路用晶体管激光器
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659247
M. Feng, N. Holonyak
{"title":"Transistor Laser for Electronic-Photonic Integrated Circuits","authors":"M. Feng, N. Holonyak","doi":"10.1109/CSICS.2013.6659247","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659247","url":null,"abstract":"We have demonstrated the first transistor that simultaneously operated as a transistor and as a laser - the \"transistor laser\" (2004). The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 100 GHz. Three-port operation expands the use of the transistor laser to electronic-photonic integrated circuits.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121036892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency Agile Monolithic GaN Doherty Power Amplifier 频率敏捷单片GaN多尔蒂功率放大器
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659226
A. Mohamed, S. Boumaiza, I. Zine-El-Abidine, R. Mansour
{"title":"Frequency Agile Monolithic GaN Doherty Power Amplifier","authors":"A. Mohamed, S. Boumaiza, I. Zine-El-Abidine, R. Mansour","doi":"10.1109/CSICS.2013.6659226","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659226","url":null,"abstract":"This paper proposes a monolithic GaN Doherty power amplifier (DPA) capable of efficiently amplifying communication signals located in multiple widely spaced wireless frequency bands. The proposed monolithic DPA incorporates a number of microelectromechanical systems switches which were used to mitigate the variation of the DPA circuit parameters within the operating frequency. A systematic design methodology was used to optimize the size and complexity of the frequency agile DPA thus locating the reconfigurability out of the combining network so that this latter can be kept off-chip. A monolithic DPA was designed and fabricated using the Canadian Photonics Fabrication Centre GaN500 monolithic microwave integrated circuit (MMIC) process (0.5 um gate length) which was operated at 1.7GHz, 2.14GHz and 2.6GHz. The preliminary measurement results demonstrated drain efficiency higher than 50% for power levels up to 6dB back-off from the peak output power.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131930758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaAs E Band Radio Chip-Set GaAs E波段无线电芯片组
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI: 10.1109/CSICS.2013.6659228
J. Tarazi, Melissa C. Rodriguez, A. Dadello, M. G. McCulloch, A. Fattorini, S. Hwang, Ryan M. Clement, A. Parker, J. Harvey, S. Mahon
{"title":"GaAs E Band Radio Chip-Set","authors":"J. Tarazi, Melissa C. Rodriguez, A. Dadello, M. G. McCulloch, A. Fattorini, S. Hwang, Ryan M. Clement, A. Parker, J. Harvey, S. Mahon","doi":"10.1109/CSICS.2013.6659228","DOIUrl":"https://doi.org/10.1109/CSICS.2013.6659228","url":null,"abstract":"A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3 of 5 dBm. For the up-converter, the measured conversion gain exceeds 10 dB and the OIP3 is approximately 26 dBm. The power amplifier has an average measured output power of 25.4 dBm and exceeds 24.5 dBm over the band. This amplifier has a measured small signal gain of 20 dB, OIP3 of approximately 32 dBm and the input and output return losses exceed 15 dB. The saturated output exceeds previous results for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the authors' knowledge this is the highest performance E-band full chipset solution realized in a commercially available GaAs foundry.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127488891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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