各种几何形状晶体管的基极电阻缩放

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659218

Yingying Yang, P. Zampardi

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引用次数: 6

摘要

基极电阻是影响双极晶体管性能和建模的重要参数。它可以从简单的输入计算:基片电阻，几何形状和接触金属特性阻抗。由于使用了各种器件几何形状，因此为不同的晶体管几何形状开发缩放方程是有用的。在这项工作中，我们建立了多指矩形器件，环形器件和马蹄形器件的基电阻的广义方程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Base Resistance Scaling for Transistors of Various Geometries

Base resistance is an important parameter for bipolar transistor performance and modeling. It can be calculated from simple inputs: base sheet resistance, geometries, and contact metal characteristic impedance. Because a variety of device geometries are used, it is useful to develop scaling equations for different transistor geometries. In this work, we develop generalized equations for the base resistance of multi-finger rectangular devices, ring devices, and horseshoe devices.

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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