GaN HEMT技术的冷却极限

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659222

Y. Won, Jungwan Cho, D. Agonafer, M. Asheghi, K. Goodson

{"title":"GaN HEMT技术的冷却极限","authors":"Y. Won, Jungwan Cho, D. Agonafer, M. Asheghi, K. Goodson","doi":"10.1109/CSICS.2013.6659222","DOIUrl":null,"url":null,"abstract":"The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":"{\"title\":\"Cooling Limits for GaN HEMT Technology\",\"authors\":\"Y. Won, Jungwan Cho, D. Agonafer, M. Asheghi, K. Goodson\",\"doi\":\"10.1109/CSICS.2013.6659222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"46\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659222\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 46

摘要

GaN HEMT技术的峰值功率密度受到从结到环境的热阻等级的限制。在这里，我们探讨了先进的热管理技术，包括gan -金刚石复合材料和纳米工程散热器，使最终或基本的冷却极限成为可能。通过对近结电阻和极端磁通对流的持续关注，可能在5年内实现超过50 kW/cm2的功率密度(取决于栅极宽度和热点尺寸)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Cooling Limits for GaN HEMT Technology

The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量