GaAs E Band Radio Chip-Set

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659228

J. Tarazi, Melissa C. Rodriguez, A. Dadello, M. G. McCulloch, A. Fattorini, S. Hwang, Ryan M. Clement, A. Parker, J. Harvey, S. Mahon

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引用次数: 3

Abstract

A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3 of 5 dBm. For the up-converter, the measured conversion gain exceeds 10 dB and the OIP3 is approximately 26 dBm. The power amplifier has an average measured output power of 25.4 dBm and exceeds 24.5 dBm over the band. This amplifier has a measured small signal gain of 20 dB, OIP3 of approximately 32 dBm and the input and output return losses exceed 15 dB. The saturated output exceeds previous results for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the authors' knowledge this is the highest performance E-band full chipset solution realized in a commercially available GaAs foundry.

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GaAs E波段无线电芯片组

一种GaAs pHEMT无线电芯片组，由接收器、上转换器和功率放大器组成，用于e波段应用，在欧洲电信标准协会(ETSI) e波段规范的整个15 GHz带宽上展示了出色的转换增益、线性度和输出功率。接收机的测量增益为12 dB，图像抑制超过10 dB, IIP2为17 dBm, IIP3为5 dBm。对于上转换器，测量的转换增益超过10 dB, OIP3约为26 dBm。该功率放大器的平均测量输出功率为25.4 dBm，超过24.5 dBm。该放大器的测量信号增益为20 dB, OIP3约为32 dBm，输入和输出回波损耗超过15 dB。饱和输出超过以往的结果，功率放大器跨越整个71至86 GHz跨度的ETSI E波段的任何半导体系统。据作者所知，这是在商用GaAs铸造厂实现的性能最高的e波段全芯片组解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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