Semiconductor Material and Device Characterization via Scanning Microwave Microscopy

Abstract

The advent of the new nano-scale high speed materials and devices require metrology tools capable of characterization at the operating frequency range with nano-scale resolution. The non-destructive measurement of dopant profile and carrier concentration in 2D and 3D are critical in the new emerging materials and devices such as carbon nanotubes, graphene, nanowires and spintronics. A new Scanning Microwave Microscope (SMM) has been developed to characterize the material and devices at microwave frequencies with nanometer resolution. The SMM has been shown to be capable of quantitative characterization of metals, semiconductors and dielectrics.