A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659203

A. Tessmann, A. Leuther, H. Massler, U. Lewark, S. Wagner, R. Weber, M. Kuri, M. Zink, M. Riessle, H. Stulz, M. Schlechtweg, O. Ambacher, R. Sommer, A. Wahlen, S. Stanko

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引用次数: 12

Abstract

In this paper, we present the development of a millimeter-wave monolithic integrated circuit (MMIC) chipset for use in a high-resolution radar system operating at 300 GHz. The chipset consists of a frequency multiplier by twelve, a medium power amplifier, a high power amplifier and a fully integrated 300 GHz heterodyne receiver MMIC. The frequency multiplier and the two amplifier circuits have been realized using a 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology and achieve a saturated output power of approximately 20 dBm between 90 and 105 GHz. The 300 GHz receiver S-MMIC was fabricated using a more advanced 35 nm mHEMT technology and demonstrates a conversion gain of more than 7 dB between 270 and 325 GHz. All circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a compact 300 GHz radar demonstrator, which delivers an instantaneous bandwidth of 40 GHz together with an outstanding range resolution of 3.7 mm.

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用于高分辨率亚毫米波雷达应用的单片集成mHEMT芯片组

在本文中，我们提出了一种毫米波单片集成电路(MMIC)芯片组的发展，用于工作在300 GHz的高分辨率雷达系统。该芯片组由一个十二倍频放大器、一个中功率放大器、一个高功率放大器和一个完全集成的300 GHz外差接收器MMIC组成。采用100 nm基于InAlAs/InGaAs的耗尽型高电子迁移率晶体管(mHEMT)技术实现了倍频器和两个放大电路，在90和105 GHz之间实现了约20 dBm的饱和输出功率。300 GHz接收器S-MMIC采用更先进的35 nm mHEMT技术制造，在270至325 GHz之间的转换增益超过7 dB。所有电路都成功封装到毫米波波导模块中，并用于实现紧凑型300 GHz雷达演示器，该演示器提供40 GHz的瞬时带宽以及3.7 mm的出色距离分辨率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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