{"title":"一种0.12µm SiGe BiCMOS工艺的q波段/ w波段双频功率放大器","authors":"Po-Yi Wu, J. Buckwalter","doi":"10.1109/CSICS.2013.6659206","DOIUrl":null,"url":null,"abstract":"A three-stage dual-band power amplifier is demonstrated in 0.12 um silicon germanium (SiGe) BiCMOS process at both Q-band and W-band. The first two stages are pseudo-differential pre-amplifiers with a high-impedance dual-band load. The final stage is a single-ended power amplifier with an appropriate impedance to produce output power. The collector-emitter junction breakdown voltage of the amplifier is extended with a low-impedance base current biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 15% with 14 dBm maximum saturated power (Psat) at 43 GHz and 9 dBm Psat at 82 GHz. The effective chip area is 1mm2 including input and output RF GSG pads.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process\",\"authors\":\"Po-Yi Wu, J. Buckwalter\",\"doi\":\"10.1109/CSICS.2013.6659206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-stage dual-band power amplifier is demonstrated in 0.12 um silicon germanium (SiGe) BiCMOS process at both Q-band and W-band. The first two stages are pseudo-differential pre-amplifiers with a high-impedance dual-band load. The final stage is a single-ended power amplifier with an appropriate impedance to produce output power. The collector-emitter junction breakdown voltage of the amplifier is extended with a low-impedance base current biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 15% with 14 dBm maximum saturated power (Psat) at 43 GHz and 9 dBm Psat at 82 GHz. The effective chip area is 1mm2 including input and output RF GSG pads.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659206\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process
A three-stage dual-band power amplifier is demonstrated in 0.12 um silicon germanium (SiGe) BiCMOS process at both Q-band and W-band. The first two stages are pseudo-differential pre-amplifiers with a high-impedance dual-band load. The final stage is a single-ended power amplifier with an appropriate impedance to produce output power. The collector-emitter junction breakdown voltage of the amplifier is extended with a low-impedance base current biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 15% with 14 dBm maximum saturated power (Psat) at 43 GHz and 9 dBm Psat at 82 GHz. The effective chip area is 1mm2 including input and output RF GSG pads.
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