{"title":"200- 245ghz平衡倍频器，峰值输出功率+ 2dbm","authors":"Hsin-chang Lin, Gabriel M. Rebeiz","doi":"10.1109/CSICS.2013.6659189","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2 dBm at 200-245 GHz with a peak value of +2 dBm at 224-228 GHz and a conversion gain of -15 dB. To the author's knowledge, this is the highest power wideband doubler at 200-250 GHz.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":"{\"title\":\"A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm\",\"authors\":\"Hsin-chang Lin, Gabriel M. Rebeiz\",\"doi\":\"10.1109/CSICS.2013.6659189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2 dBm at 200-245 GHz with a peak value of +2 dBm at 224-228 GHz and a conversion gain of -15 dB. To the author's knowledge, this is the highest power wideband doubler at 200-250 GHz.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"35\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659189\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm
This paper presents a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2 dBm at 200-245 GHz with a peak value of +2 dBm at 224-228 GHz and a conversion gain of -15 dB. To the author's knowledge, this is the highest power wideband doubler at 200-250 GHz.
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