一种GaAs MMIC单片RF-MEMS开关可调谐LNA

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659199

R. Malmqvist, C. Samuelsson, S. Reyaz, A. Gustafsson, S. Seok, M. Fryziel, P. Rolland, B. Grandchamp, R. Baggen

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引用次数: 2

摘要

本文提出了一种采用GaAs MMIC工艺实现的RF-MEMS频率捷变LNA的新颖紧凑电路设计，该电路还包括一个BCB帽型晶圆级封装。可在不同频段(如x频段和Ku / k频段)匹配的无封顶/BCB封顶单片GaAs MEMS可调谐LNA电路在30-60%宽调谐范围内具有相似的带内增益、线性度和噪声系数(无封顶MEMS可调谐LNA在14-21 GHz时NF≤3 dB，在9-13 GHz时NF高≤0.6 dB)。经过验证的MMIC设计是首次在GaAs代工工艺中实现无封顶/0级封装MEMS可调谐(宽带/窄带)LNAs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A GaAs MMIC Single-Chip RF-MEMS Switched Tunable LNA

This paper presents a novel compact circuit design of an RF-MEMS frequency-agile LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The uncapped/BCB capped single-chip GaAs MEMS tunable LNA circuits which can be matched at different frequency bands (e.g at X-band and Ku-/K-band) present similar in-band gain, linearity and noise figure over 30-60% wide tuning ranges (the uncapped MEMS tunable LNA has an NF≤3 dB at 14-21 GHz with ≤0.6 dB higher NF at 9-13 GHz). The validated MMIC designs are first time realizations of uncapped/0-level packaged MEMS tunable (wide-band/narrow-band) LNAs in a GaAs foundry process.

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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