45纳米SOI CMOS直接调幅和相位调制的2×44Gb/s 110 ghz无线发射机

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659188

A. Balteanu, S. Shopov, S. Voinigescu

{"title":"45纳米SOI CMOS直接调幅和相位调制的2×44Gb/s 110 ghz无线发射机","authors":"A. Balteanu, S. Shopov, S. Voinigescu","doi":"10.1109/CSICS.2013.6659188","DOIUrl":null,"url":null,"abstract":"This paper investigates the maximum Baud rate and the scalability to the W-Band of the mm-wave IQ power-DAC transmitter architecture. A 45-nm SOI CMOS implementation achieves 44-Gbps BPSK and 88-Gbps BPSK+OOK modulation rates at 100-110 GHz with energy efficiency of 9.4 pJ/bit and output powers ranging from 8.6 to 11.7 dBm.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A 2×44Gb/s 110-GHz Wireless Transmitter with Direct Amplitude and Phase Modulation in 45-nm SOI CMOS\",\"authors\":\"A. Balteanu, S. Shopov, S. Voinigescu\",\"doi\":\"10.1109/CSICS.2013.6659188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the maximum Baud rate and the scalability to the W-Band of the mm-wave IQ power-DAC transmitter architecture. A 45-nm SOI CMOS implementation achieves 44-Gbps BPSK and 88-Gbps BPSK+OOK modulation rates at 100-110 GHz with energy efficiency of 9.4 pJ/bit and output powers ranging from 8.6 to 11.7 dBm.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 15

摘要

本文研究了毫米波IQ功率dac发射机结构的最大波特率和w波段的可扩展性。45纳米SOI CMOS实现在100-110 GHz下实现44 gbps BPSK和88 gbps BPSK+OOK调制速率，能量效率为9.4 pJ/bit，输出功率范围为8.6至11.7 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 2×44Gb/s 110-GHz Wireless Transmitter with Direct Amplitude and Phase Modulation in 45-nm SOI CMOS

This paper investigates the maximum Baud rate and the scalability to the W-Band of the mm-wave IQ power-DAC transmitter architecture. A 45-nm SOI CMOS implementation achieves 44-Gbps BPSK and 88-Gbps BPSK+OOK modulation rates at 100-110 GHz with energy efficiency of 9.4 pJ/bit and output powers ranging from 8.6 to 11.7 dBm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量