氮化镓晶体管——从直流到射频功率转换的最佳新兴技术

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659230

A. Lidow

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引用次数: 3

摘要

自第一个氮化镓晶体管作为功率MOSFET替代品在商业功率转换应用中交付以来，已经过去了三年。从那时起，人们对这项新技术的开发和商业化产生了浓厚的兴趣，并取得了迅速的进展。在本文中，我们将给出GaN技术的最新进展，其与功率mosfet和LDMOS RF晶体管的性能比较，以及在功率转换领域“早期采用者”的地位。

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GaN Transistors - The Best Emerging Technology for Power Conversion from DC through RF

It has been three years since the first gallium nitride transistors were delivered as power MOSFET replacements in a commercial power conversion application. Since that time there has been major interest, and rapid progress in the development and commercialization of this new technology. In this paper we will give an update on GaN technology, its performance compared with power MOSFETs and LDMOS RF transistors, as well as the status of "early adopters" in the world of power conversion.

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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