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CMOS based optical focusing stage with phase grating Fresnel lens 基于 CMOS 的光学聚焦平台，带相位光栅菲涅尔透镜
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285642
Sz-Yuan Lee, Chia-Hsi Wang, Chih-Hsiang Yang, Chih-Ming Sun, W. Fang
{"title":"CMOS based optical focusing stage with phase grating Fresnel lens","authors":"Sz-Yuan Lee, Chia-Hsi Wang, Chih-Hsiang Yang, Chih-Ming Sun, W. Fang","doi":"10.1109/SENSOR.2009.5285642","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285642","url":null,"abstract":"This study reports a CMOS based optical focusing stage, which incorporates a binary phase-grating Fresnel-lens (PF-Lens). This PF-Lens is the first time implemented in CMOS micro stage. It exploits the superior fine line width and transparent dielectric thin film of CMOS process. Diffraction efficiency of PF-Lens is theoretically fourfold better than that of typical binary amplitude-grating Fresnel-lens (AF-Lens). In addition, by dispensing UV curable transparent polymer onto Fresnel-lens, the resulted compound lens can achieve a shorter focal length of 648µm (HeNe laser). The integrated micro stage is thermally actuated. It provides 12µm stroke alone optical-axis and 17.3µm across optical-axis. It is sufficient to compensate optical alignment error and to speed up precision focus tracking.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126124745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new magnetically actuated switch for precise position detection 一种用于精确位置检测的新型磁驱动开关
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285825
C. Coutier, L. Chiesi, A. Garnier, J. Fourrier, C. Lapiere, M. Trouillon, B. Grappe, M. Vincent, A. Samperio, S. Borel, C. Dieppedale, E. Lorent, H. Sibuet
{"title":"A new magnetically actuated switch for precise position detection","authors":"C. Coutier, L. Chiesi, A. Garnier, J. Fourrier, C. Lapiere, M. Trouillon, B. Grappe, M. Vincent, A. Samperio, S. Borel, C. Dieppedale, E. Lorent, H. Sibuet","doi":"10.1109/SENSOR.2009.5285825","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285825","url":null,"abstract":"This paper reports on a new component which allows a mechanical position to be accurately detected. This component is a magnetically actuated microswitch fabricated in MEMS technology. Unlike the well-known Reed or Hall switches components this magnetic microswitch offers all of the following advantages: - a powerless sensor, - a highly integrated sensor (less than 3mm3), - an electrical isolation (dry contact) - a high position accuracy (no component dispersion), - an easy implementation in real applications, thanks to a well verified analytical model. Position detection accuracy of the sensor as well as electrical and reliability tests results are reported.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"439 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123581129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A CMOS-MEMS rotary microactuator suitable for hard disk drive applications 适用于硬盘驱动器应用的CMOS-MEMS旋转微致动器
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285802
W. Messner, J. Bain, M. Koenders, J. Groenesteijn, G. H. Marsman, P. Gilgunn, G. Fedder
{"title":"A CMOS-MEMS rotary microactuator suitable for hard disk drive applications","authors":"W. Messner, J. Bain, M. Koenders, J. Groenesteijn, G. H. Marsman, P. Gilgunn, G. Fedder","doi":"10.1109/SENSOR.2009.5285802","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285802","url":null,"abstract":"This work presents an electrothermal rotary actuator fabricated using CMOS-MEMS technology. The device discussed herein shows a rotational stroke of more than 10º and an electrothermal actuation cut-off frequency of 300 Hz. The device footprint is less than 1 mm × 1 mm and power consumption is less than 10 mW. The above performance and the device topology make it attractive for application in hard disk drive (HDD) head actuation applications. This paper details fabrication and characterization of this device and methods for extending its performance to levels needed for HDD applications.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125549537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Assembly-free 3-D microfabrication process using single-mask multidirectional photolithography 使用单掩膜多向光刻技术的无装配3d微加工工艺
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285689
T. Suzuki, H. Yamamoto, I. Kanno, M. Washizu, H. Kotera
{"title":"Assembly-free 3-D microfabrication process using single-mask multidirectional photolithography","authors":"T. Suzuki, H. Yamamoto, I. Kanno, M. Washizu, H. Kotera","doi":"10.1109/SENSOR.2009.5285689","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285689","url":null,"abstract":"In this paper, we propose a novel microfabrication technique without assembling process including alignment and bonding for significant 3-D microstructures and microfludic networks. The proposed process can integrate embedded microchannels with free path, orifices, openings and nozzles into a complicated microfluidic network by using the inclined/rotated UV lithography with a characteristic single-mask of whole image exposure in a short period of time.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129247227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Selective electrochemical release etching of eutectically bonded microstructures 共晶键合微结构的选择性电化学释放蚀刻
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285586
H. Gradin, S. Braun, M. Sterner, G. Stemme, Wouter van der Wijngaart
{"title":"Selective electrochemical release etching of eutectically bonded microstructures","authors":"H. Gradin, S. Braun, M. Sterner, G. Stemme, Wouter van der Wijngaart","doi":"10.1109/SENSOR.2009.5285586","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285586","url":null,"abstract":"This paper reports on the successful demonstration of a novel microfabrication method in which eutectic gold bonded microstructures are selectively electrochemically release etched. This method offers several advantages: both a strong permanent bond and a temporary bond is achieved on the same die, the footprint of the temporary bonded structures is allowed to be larger than the footprint of the permanently bonded structures and the used etchants provide a larger process compatibility than the etchants of other release etch methods. Eutectically bonded 350 µm wide silicon structures were fully released after 1 hour of electrochemical etching followed by 1.5 hours wet etching of the TiW adhesion layer.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129492407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Micromachined tube-type of Si droplet generator 微机械管式硅液滴发生器
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285483
H. Hida, N. Inagaki, M. Koyama, M. Shikida, K. Sato
{"title":"Micromachined tube-type of Si droplet generator","authors":"H. Hida, N. Inagaki, M. Koyama, M. Shikida, K. Sato","doi":"10.1109/SENSOR.2009.5285483","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285483","url":null,"abstract":"We developed the novel type of droplet generator for the bio-chemical reactions, and designed it by considering Reynolds and Weber numbers. The Si droplet generator was fabricated on a silicon-on-insulator wafer by using deep-reactive ion etching and was fixed in a piece of heat-shrinkable tubing by heating the tubing. We experimentally confirmed that the fabricated droplet generator formed droplets in 1 mm diameter with jetting.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129917683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New electromagnetic transduction micro-sensor concept for passive wireless pressure monitoring application 用于无源无线压力监测的新型电磁换能式微传感器概念
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285739
M. Jatlaoui, F. Chebila, I. Gmati, P. Pons, H. Aubert
{"title":"New electromagnetic transduction micro-sensor concept for passive wireless pressure monitoring application","authors":"M. Jatlaoui, F. Chebila, I. Gmati, P. Pons, H. Aubert","doi":"10.1109/SENSOR.2009.5285739","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285739","url":null,"abstract":"In this communication we present a new and different approach based on electromagnetic transduction principle, which can be used for long distance covering pressure measurement. Previous work reported by the authors has validated the principle of the electromagnetic transduction for 400µm silicon membrane thickness and with the hypothesis of uniform vertical membrane displacement [1–2]. In this new report we investigate the effect of the silicon membrane thickness on electromagnetic transduction sensitivity. Moreover the completely passive wireless monitoring pressure micro-sensor is reported by taking into account the real deflection of the silicon membrane under pressure. This communication is focused only on the pressure measurement cell.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130416800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Tensile testing of fullerene nano wire using electrostatic MEMS device 静电MEMS器件对富勒烯纳米线的拉伸性能测试
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285640
Y. Ura, K. Sugano, T. Tsuchiya, O. Tabata
{"title":"Tensile testing of fullerene nano wire using electrostatic MEMS device","authors":"Y. Ura, K. Sugano, T. Tsuchiya, O. Tabata","doi":"10.1109/SENSOR.2009.5285640","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285640","url":null,"abstract":"In this paper, we report tensile testing of a fullerene wire using an electrostatic MEMS device which can test nano-scale materials. We developed an electrostatic MEMS tensile testing device which has a comb drive actuator to apply tensile force to a specimen and two capacitances for measurement of the displacement to measure the elongation and applied force of the specimen. A free-standing fullerene wire which was about 16 µm long, 2µm wide and 40nm thick was integrated on the device and the tensile testing of the wire was successfully demonstrated with nano order resolutions. Measured Young's modulus and tensile strength of the wire were 5.9 GPa, 17 MPa, respectively.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Micro blender and separator using inner-vortex of droplet induced by surface acoustic wave 利用表面声波诱导液滴内涡的微型混合分离器
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285487
T. Sano, T. Onuki, Y. Hamate, M. Hojo, S. Nagasawa, H. Kuwano
{"title":"Micro blender and separator using inner-vortex of droplet induced by surface acoustic wave","authors":"T. Sano, T. Onuki, Y. Hamate, M. Hojo, S. Nagasawa, H. Kuwano","doi":"10.1109/SENSOR.2009.5285487","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285487","url":null,"abstract":"We report on a micro vortex in a droplet induced by surface acoustic wave acoustic streaming (SAW-AS), which is applicable as a stirrer in micro fluidic devices. Fine controllability of the flow rate in a micro vortex was revealed using two flow-tracking methods with colored aqueous fluids, or scattering laser beams by distributed particles. We performed two practical tasks of a micro stirrer as an on-chip blender and as a separator. Demonstrations results with a small concentrated blood specimen are also shown.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123908541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Wafer level fabrication of high performance MEMS using bonded and thinned bulk piezoelectric substrates 晶圆级制造高性能MEMS的结合和薄体压电衬底
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI: 10.1109/SENSOR.2009.5285795
E. Aktakka, Hanseup Kim, Khalil Najafi
{"title":"Wafer level fabrication of high performance MEMS using bonded and thinned bulk piezoelectric substrates","authors":"E. Aktakka, Hanseup Kim, Khalil Najafi","doi":"10.1109/SENSOR.2009.5285795","DOIUrl":"https://doi.org/10.1109/SENSOR.2009.5285795","url":null,"abstract":"We report a batch-mode fabrication technology for integration of bulk piezoelectric materials into MEMS devices, and test results of high-performance out-of-plane piezoelectric actuators fabricated with this technology. Low-temperature (200°C), reliable AuIn and Parylene bonding of PZT wafers/dies on Si wafers is achieved, and lapping is used to obtain ≪10µm PZT films. Conservation of the piezoelectric properties is confirmed with a hysteresis measurement. Additionally, square and circular shaped PZT diaphragms with 4mm×4mm, 2mm×2mm, and 1mm×1mm sizes operating in the d31-mode are fabricated with a 2-mask fabrication process. Greater than 12µm peak-to-peak deflection is obtained by actuation of a 1mm2 diaphragm at resonance (110.9kHz) with a power consumption of ≪7mW.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123659015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
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