晶圆级制造高性能MEMS的结合和薄体压电衬底

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI:10.1109/SENSOR.2009.5285795

E. Aktakka, Hanseup Kim, Khalil Najafi

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引用次数: 26

摘要

我们报道了一种将大块压电材料集成到MEMS器件中的批量制造技术，以及用该技术制造的高性能面外压电驱动器的测试结果。在硅晶片上实现了PZT晶片/模具的低温(200°C)、可靠的铟和聚对二甲苯粘合，并使用研磨获得了≪10 μ m PZT薄膜。通过迟滞测量证实了压电特性的守恒性。此外，在d31模式下工作的尺寸为4mm×4mm, 2mm×2mm和1mm×1mm的方形和圆形PZT隔膜采用2掩模制造工艺制造。通过在共振(110.9kHz)时驱动1mm2的膜片，可获得大于12 μ m的峰间偏转，功耗为≪7mW。

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Wafer level fabrication of high performance MEMS using bonded and thinned bulk piezoelectric substrates

We report a batch-mode fabrication technology for integration of bulk piezoelectric materials into MEMS devices, and test results of high-performance out-of-plane piezoelectric actuators fabricated with this technology. Low-temperature (200°C), reliable AuIn and Parylene bonding of PZT wafers/dies on Si wafers is achieved, and lapping is used to obtain ≪10µm PZT films. Conservation of the piezoelectric properties is confirmed with a hysteresis measurement. Additionally, square and circular shaped PZT diaphragms with 4mm×4mm, 2mm×2mm, and 1mm×1mm sizes operating in the d31-mode are fabricated with a 2-mask fabrication process. Greater than 12µm peak-to-peak deflection is obtained by actuation of a 1mm2 diaphragm at resonance (110.9kHz) with a power consumption of ≪7mW.

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TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

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