2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown 高性能和中等故障SiGe hbt的可靠性差异
Rafael Perez Martinez, U. Raghunathan, Brian R. Wier, Harrison P. Lee, J. Cressler
{"title":"Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown","authors":"Rafael Perez Martinez, U. Raghunathan, Brian R. Wier, Harrison P. Lee, J. Cressler","doi":"10.1109/BCICTS45179.2019.8972746","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972746","url":null,"abstract":"This paper presents an overview of the reliability differences of devices optimized for high-performance (HP) and medium-breakdown (MB) in SiGe HBT technologies. To explore the physics of failure, a MB variant in a fourth-generation SiGe HBT technology is described from a processing standpoint to understand any subtle distinctions between its HP counterpart. Reliability stress measurement data is shown to provide insight into the differences between HP and MB SiGe HBTs when biased under high-current and mixed-mode stress conditions. TCAD simulations are presented to aid in the physical understanding of Auger generation/recombination rates, impact ionization rates, and power density across a wide range of conditions where these devices are typically biased and used.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116144694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Probabilistic Computing with Binary Stochastic Neurons 二元随机神经元的概率计算
A. Pervaiz, S. Datta, Kerem Y Çamsarı
{"title":"Probabilistic Computing with Binary Stochastic Neurons","authors":"A. Pervaiz, S. Datta, Kerem Y Çamsarı","doi":"10.1109/BCICTS45179.2019.8972719","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972719","url":null,"abstract":"Deterministic bits that represent \"0\" or \"1\" form the basis of all digital computing. At the other end of the spectrum, quantum bits represent a superposition of \"0\" and \"1\" and form the basis of the emerging field of quantum computing. Recently, it has been shown that probabilistic bits or \"p-bits\" which fluctuate between \"0\" and \"1\" can be correlated using techniques borrowed from neural networks and can be used to address a broad class of problems relevant to machine learning and quantum computing. It has been shown that scaled p-bit implementations can be realized in hardware by making slight modifications to existing MRAM technology that are nearing production in Gb level densities. Even though there are no fundamental obstacles, implementing MTJ-based p-bits in gigabit scales can be challenging as they require a careful design of low- barrier nanomagnets which, unlike high-barrier nanomagnets, remain relatively unexplored. In this paper, we propose and experimentally demonstrate the operation of a compact, low-level p-bit emulator that retains much of the physics of the MRAM- based p-bit. The emulator uses most of the components of the original mixed-signal design and simply replaces the low-barrier nanomagnet with a fluctuating resistor circuit. Our emulation allows us to build asynchronously operating rudimentary p- computers to explore potential difficulties that could arise in scaled nanodevice based p-computers.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129813407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Advanced mm-Wave Power Electronics (Invited Talk) 先进毫米波功率电子学(特邀讲座)
Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan
{"title":"Advanced mm-Wave Power Electronics (Invited Talk)","authors":"Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan","doi":"10.1109/BCICTS45179.2019.8972770","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972770","url":null,"abstract":"The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129319130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications 用于28 GHz 5G应用的8瓦线性三级GaN Doherty功率放大器
D. Wohlert, B. Peterson, Thi Ri Mya Kywe, Luís Ledezma, Jeff Gengler
{"title":"8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications","authors":"D. Wohlert, B. Peterson, Thi Ri Mya Kywe, Luís Ledezma, Jeff Gengler","doi":"10.1109/BCICTS45179.2019.8972750","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972750","url":null,"abstract":"This paper presents a three-stage Ka-band Doherty power amplifier fabricated using 0.15 μm GaN-on-SiC HEMT technology. Peak-power greater than 8-watts, 30 dB of small-signal gain, and over 20% of PAE at 6 dB output back-off has been achieved for 27 to 29.5 GHz operation. In addition, the raw linearity of the Doherty amplifier has been measured using a 400 MHz, 64-QAM CP-OFDM signal with a 9.6 dB peak-to-average-power-ratio. Uncorrected ACPR as good as -40 dBc and EVM as low as 2% demonstrate the potential of this amplifier for 5G applications.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116524907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Application of the Kull epilayer formulation to a compact model for junction diodes Kull脱毛层公式在结二极管紧凑模型中的应用
A. DiVergilio
{"title":"Application of the Kull epilayer formulation to a compact model for junction diodes","authors":"A. DiVergilio","doi":"10.1109/BCICTS45179.2019.8972733","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972733","url":null,"abstract":"This paper presents an application of the Kull-Nagel epilayer formulation for conductivity modulation to a compact model for junction diodes. This enhancement allows for improved accuracy in modeling the bias-dependence of the series resistance, a critical figure of merit for diodes used in RF and switching applications. The model is implemented in Verilog-A as an extension to the 3-terminal electrothermal diode model presented in an earlier work [1]. Hardware-verified results are demonstrated for a 90nm SiGe BiCMOS technology featuring an integrated PIN diode.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129101646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures 低温下SiGe HBTs的直流和射频变异性
Hanbin Ying, Jeffrey W. Teng, George N. Tzintzarov, Anup P. Omprakash, Sunil G. Rao, U. Raghunathan, Adrian Ildefonso, Martin S. Fernandez, J. Cressler
{"title":"DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures","authors":"Hanbin Ying, Jeffrey W. Teng, George N. Tzintzarov, Anup P. Omprakash, Sunil G. Rao, U. Raghunathan, Adrian Ildefonso, Martin S. Fernandez, J. Cressler","doi":"10.1109/BCICTS45179.2019.8972709","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972709","url":null,"abstract":"We present measurement results of commercially-available 90-nm SiGe HBTs at 300 K, 78 K, and 7 K. The data reveal increased variability of SiGe HBTs at 78 K and 7 K compared to that at 300 K. The variation of collector current, base current, and DC current gain (β) increase from 5% at 300 K to 50% at 7 K around the average measured values. Transconductance (gm) variation increases from 0.6% at 300 K to 5% at 7 K. Peak fT variation increases from 2.6% to 7.1%, while the fT at low injection increases from 1.8% at 300 K to 24.9% at 7 K. Increased variability is observed at lower injection levels at 78 K and 7 K and DC parameters tend to have more variation than RF parameters. The implications of increased variability for circuit designs supporting emerging cryogenic applications such as quantum computing are discussed.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"271 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116836901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Mathematical foundation for constructing accurate dynamic bipolar transistor compact models 建立精确动态双极晶体管紧凑模型的数学基础
M. Schröter, M. Krattenmacher
{"title":"Mathematical foundation for constructing accurate dynamic bipolar transistor compact models","authors":"M. Schröter, M. Krattenmacher","doi":"10.1109/BCICTS45179.2019.8972737","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972737","url":null,"abstract":"For present and future mm- and sub-mm-wave applications, compact models need to capture the large-signal dynamic transistor behavior up to several harmonics, which are often far beyond the transistor cut-off frequencies. Since such such frequencies exceed the existing or usually affordable measurement capability, a physically and mathematically sound approach for developing compact models is required that guarantees a desired level of accuracy. This paper demonstrates the construction of physics-based equivalent circuits for the intrinsic transistor operation based on a closed-form solution of the DD transport and continuity equation. The solutions are verified based on device simulation.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131018141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Collector-substrate modeling of SiGe HBTs up to THz range 高达太赫兹范围的SiGe HBTs的集电极-衬底建模
B. Saha, S. Frégonèse, S. Panda, A. Chakravorty, D. Céli, T. Zimmer
{"title":"Collector-substrate modeling of SiGe HBTs up to THz range","authors":"B. Saha, S. Frégonèse, S. Panda, A. Chakravorty, D. Céli, T. Zimmer","doi":"10.1109/BCICTS45179.2019.8972745","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972745","url":null,"abstract":"The undesired behavior of the substrate significantly affects the output impedance of the device; hence degrades circuit performance mainly in the high frequency regime. Therefore, for high-speed and RF circuits, collector-substrate modeling has to be sufficiently accurate. In this paper, an improved collector-substrate equivalent circuit model is proposed. The circuit model elements are physics based and are calculated from technological data. The validity of the equivalent circuit has been verified by on-wafer measurements of an SiGe HBT fabricated in B55 technology up to 330 GHz, the highest frequency reported so far for collector-substrate modeling. The proposed substrate network can be considered as an extension of the latest large-signal HICUM model (L2v2.4).","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124032379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates 独立GaN衬底上GaN hemt的显著电流崩溃抑制
Y. Kumazaki, Keiji Watanabe, T. Ohki, J. Kotani, S. Ozaki, Y. Niida, K. Makiyama, Y. Minoura, N. Okamoto, N. Nakamura
{"title":"Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates","authors":"Y. Kumazaki, Keiji Watanabe, T. Ohki, J. Kotani, S. Ozaki, Y. Niida, K. Makiyama, Y. Minoura, N. Okamoto, N. Nakamura","doi":"10.1109/BCICTS45179.2019.8972742","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972742","url":null,"abstract":"The current collapse phenomena, particularly the trap-induced threshold voltage shift, was drastically reduced in GaN high-electron-mobility transistors (GaN-HEMTs) fabricated on GaN free-standing substrates. High breakdown voltage of 376 V was achieved and off-state leakage current was also suppressed until a hard breakdown condition. These could be attributed to the improvement of crystal quality in the homo-epitaxial GaN layer, that is, reduction in the dislocation density and absence of nucleation layer. GaN-HEMTs on GaN substrates with a gate length of 0.5 µm exhibited good RF performance with a maximum power added efficiency of 71% with an associated output power of 6.6 W/mm at a 2.45 GHz load-pull measurement. It is evident that GaN-HEMTs on the GaN substrates are promising for driving up a performance of an RF amplifier.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129398407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Integrated CMOS-Compatible Mode-Locked Lasers and Their Optoelectronic Applications 集成cmos兼容锁模激光器及其光电应用
F. Kärtner, Neetesh Singh
{"title":"Integrated CMOS-Compatible Mode-Locked Lasers and Their Optoelectronic Applications","authors":"F. Kärtner, Neetesh Singh","doi":"10.1109/BCICTS45179.2019.8972720","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972720","url":null,"abstract":"Mode-locked lasers producing femtosecond pulses show ultra-low timing jitter. Upon photo detection the harmonics of the photo current at multiples of the pulse repetition rate, show ideally ultra-low phase noise. Here, we review the scaling behind this ultra-low jitter sources and their potential impact in optoelectronic systems. Therefore, integrated CMOS-compatible mode-locked lasers producing femtosecond pulses are expected to deliver trains of ultrashort pulses with unprecedented low timing jitter, and enable microwave signals at every harmonic of the fundamental repetition rate with ultra-low phase noise after detection in a very compact format. In combination with tunable lasers and frequency comb technology also high precision optical signals can be synthesized for miniaturized optical clocks and optical spectroscopy systems. We review recent progress towards chip-scale mode-locked lasers in the femtosecond regime using rare-earth doped gain media. Current limitations, can be overcome with improved low-loss integrated waveguides and novel gain deposition technology. In addition, a suite of integrated optical components in silicon photonics technology is discussed that enables the implementation of integrated frequency combs, and, therefore optical synthesizers or ultra-low noise microwave sources based on direct optical frequency division.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126892880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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