2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第3页

Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown 高性能和中等故障SiGe hbt的可靠性差异

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972746

Rafael Perez Martinez, U. Raghunathan, Brian R. Wier, Harrison P. Lee, J. Cressler

引用次数: 1

Probabilistic Computing with Binary Stochastic Neurons 二元随机神经元的概率计算

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972719

A. Pervaiz, S. Datta, Kerem Y Çamsarı

{"title":"Probabilistic Computing with Binary Stochastic Neurons","authors":"A. Pervaiz, S. Datta, Kerem Y Çamsarı","doi":"10.1109/BCICTS45179.2019.8972719","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972719","url":null,"abstract":"Deterministic bits that represent \"0\" or \"1\" form the basis of all digital computing. At the other end of the spectrum, quantum bits represent a superposition of \"0\" and \"1\" and form the basis of the emerging field of quantum computing. Recently, it has been shown that probabilistic bits or \"p-bits\" which fluctuate between \"0\" and \"1\" can be correlated using techniques borrowed from neural networks and can be used to address a broad class of problems relevant to machine learning and quantum computing. It has been shown that scaled p-bit implementations can be realized in hardware by making slight modifications to existing MRAM technology that are nearing production in Gb level densities. Even though there are no fundamental obstacles, implementing MTJ-based p-bits in gigabit scales can be challenging as they require a careful design of low- barrier nanomagnets which, unlike high-barrier nanomagnets, remain relatively unexplored. In this paper, we propose and experimentally demonstrate the operation of a compact, low-level p-bit emulator that retains much of the physics of the MRAM- based p-bit. The emulator uses most of the components of the original mixed-signal design and simply replaces the low-barrier nanomagnet with a fluctuating resistor circuit. Our emulation allows us to build asynchronously operating rudimentary p- computers to explore potential difficulties that could arise in scaled nanodevice based p-computers.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129813407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Advanced mm-Wave Power Electronics (Invited Talk) 先进毫米波功率电子学(特邀讲座)

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972770

Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan

引用次数: 1

8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications 用于28 GHz 5G应用的8瓦线性三级GaN Doherty功率放大器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972750

D. Wohlert, B. Peterson, Thi Ri Mya Kywe, Luís Ledezma, Jeff Gengler

引用次数: 16

Application of the Kull epilayer formulation to a compact model for junction diodes Kull脱毛层公式在结二极管紧凑模型中的应用

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972733

A. DiVergilio

引用次数: 1

DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures 低温下SiGe HBTs的直流和射频变异性

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972709

Hanbin Ying, Jeffrey W. Teng, George N. Tzintzarov, Anup P. Omprakash, Sunil G. Rao, U. Raghunathan, Adrian Ildefonso, Martin S. Fernandez, J. Cressler

引用次数: 4

Mathematical foundation for constructing accurate dynamic bipolar transistor compact models 建立精确动态双极晶体管紧凑模型的数学基础

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972737

M. Schröter, M. Krattenmacher

引用次数: 0

Collector-substrate modeling of SiGe HBTs up to THz range 高达太赫兹范围的SiGe HBTs的集电极-衬底建模

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972745

B. Saha, S. Frégonèse, S. Panda, A. Chakravorty, D. Céli, T. Zimmer

引用次数: 4

Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates 独立GaN衬底上GaN hemt的显著电流崩溃抑制

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972742

Y. Kumazaki, Keiji Watanabe, T. Ohki, J. Kotani, S. Ozaki, Y. Niida, K. Makiyama, Y. Minoura, N. Okamoto, N. Nakamura

引用次数: 8

Integrated CMOS-Compatible Mode-Locked Lasers and Their Optoelectronic Applications 集成cmos兼容锁模激光器及其光电应用

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972720

F. Kärtner, Neetesh Singh

{"title":"Integrated CMOS-Compatible Mode-Locked Lasers and Their Optoelectronic Applications","authors":"F. Kärtner, Neetesh Singh","doi":"10.1109/BCICTS45179.2019.8972720","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972720","url":null,"abstract":"Mode-locked lasers producing femtosecond pulses show ultra-low timing jitter. Upon photo detection the harmonics of the photo current at multiples of the pulse repetition rate, show ideally ultra-low phase noise. Here, we review the scaling behind this ultra-low jitter sources and their potential impact in optoelectronic systems. Therefore, integrated CMOS-compatible mode-locked lasers producing femtosecond pulses are expected to deliver trains of ultrashort pulses with unprecedented low timing jitter, and enable microwave signals at every harmonic of the fundamental repetition rate with ultra-low phase noise after detection in a very compact format. In combination with tunable lasers and frequency comb technology also high precision optical signals can be synthesized for miniaturized optical clocks and optical spectroscopy systems. We review recent progress towards chip-scale mode-locked lasers in the femtosecond regime using rare-earth doped gain media. Current limitations, can be overcome with improved low-loss integrated waveguides and novel gain deposition technology. In addition, a suite of integrated optical components in silicon photonics technology is discussed that enables the implementation of integrated frequency combs, and, therefore optical synthesizers or ultra-low noise microwave sources based on direct optical frequency division.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126892880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5