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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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A 110-GHz-Bandwidth 2:1 AMUX-Driver using 250-nm InP DHBTs for Beyond-1-Tb/s/carrier Optical Transmission Systems 用于超过1tb /s/载波光传输系统的采用250nm InP dhbt的110ghz带宽2:1 amux驱动器
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972726
M. Nagatani, Y. Miyamoto, H. Nosaka, H. Wakita, Y. Ogiso, H. Yamazaki, M. Mutoh, M. Ida, F. Hamaoka, M. Nakamura, Takayuki Kobayashi
{"title":"A 110-GHz-Bandwidth 2:1 AMUX-Driver using 250-nm InP DHBTs for Beyond-1-Tb/s/carrier Optical Transmission Systems","authors":"M. Nagatani, Y. Miyamoto, H. Nosaka, H. Wakita, Y. Ogiso, H. Yamazaki, M. Mutoh, M. Ida, F. Hamaoka, M. Nakamura, Takayuki Kobayashi","doi":"10.1109/BCICTS45179.2019.8972726","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972726","url":null,"abstract":"This paper presents the first ultra-broadband 2:1 analog multiplexer (AMUX) monolithically integrated with an optical modulator driver with the record bandwidth using 250-nm InP double heterojunction bipolar transistors (DHBTs). The fabricated driver-integrated AMUX (AMUX-Driver) IC has a data-path bandwidth of over 110 GHz and a data-path gain of 10.5 dB. A 160-GBaud-class baseband signal generation has been achieved by using this AMUX-Driver IC. In addition, a compact integrated optical front-end module with a 6-dB electro-optic (EO) bandwidth of 80 GHz, incorporating the AMUX-Driver ICs and an InP-based optical I/Q modulator, has been developed. We have successfully demonstrated a beyond-1-Tb/s/carrier optical modulation based on 168-GBaud polarization division multiplexed (PDM) 16-ary quadrature amplitude modulation (16-QAM) by using this integrated module.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114358611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance 第二代SLCFET放大器:改进FT/FMAX和噪声性能
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972728
Ken A. Nagamatsu, S. Afroz, Shalini Gupta, S. Wanis, J. Hartman, E. Stewart, P. Shea, K. Renaldo, R. Howell, Brian Novak, Annaliese Drechsler, Josephine B. Chang, D. Dawson, R. Freitag, K. Frey, Monique Farrell, Georges Siddiqi
{"title":"Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance","authors":"Ken A. Nagamatsu, S. Afroz, Shalini Gupta, S. Wanis, J. Hartman, E. Stewart, P. Shea, K. Renaldo, R. Howell, Brian Novak, Annaliese Drechsler, Josephine B. Chang, D. Dawson, R. Freitag, K. Frey, Monique Farrell, Georges Siddiqi","doi":"10.1109/BCICTS45179.2019.8972728","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972728","url":null,"abstract":"This report describes the second generation (Gen2) of the Superlattice Castellated Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier is a new device that uses 3-dimensional device geometry to modulate a superlattice of multiple AlGaN/GaN channels. The superlattice enables extremely low source and drain resistances and high output current and power density, while the 3-dimensional, low-resistance T-gate provides good electrostatic control and high gain. The wide bandgap material system also provides a high breakdown voltage. These properties lead to a robust, high performance device for low-noise and power amplifier applications. Process improvements allow the Gen2 device to reach FT/FMAX of 76/130 GHz. At 10 GHz, noise characterization achieves a minimum NFmin of 0.699 dB and load pull measurements achieve over 70% peak Power Added Efficiency (PAE).","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116346039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Load pull measurement techniques: architecture, accuracy, and applications 负载拉力测量技术:结构、精度和应用
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972744
M. Marchetti, G. Avolio, M. Squillante, Ajay K. Doggalli
{"title":"Load pull measurement techniques: architecture, accuracy, and applications","authors":"M. Marchetti, G. Avolio, M. Squillante, Ajay K. Doggalli","doi":"10.1109/BCICTS45179.2019.8972744","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972744","url":null,"abstract":"This paper focuses on challenges and requirements posed by future communication systems on load-pull measurements. In particular, we discuss the architecture of a state-of-the-art mixed-signal load pull measurement system which enables wideband impedance control with complex modulated signals. We also address some aspects related to dynamic-range improvement and describe a procedure for evaluating traceable uncertainty of power measurements as a function of the load impedance. We also present a few application examples showing how load-pull can support testing and development of devices and circuits of next-generation systems.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131326393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers 射频功率放大器水平电流双极晶体管(HCBT)特性分析
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972731
Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj
{"title":"Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers","authors":"Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj","doi":"10.1109/BCICTS45179.2019.8972731","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972731","url":null,"abstract":"The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT structures for RF power amplifiers. Firstly, the DC collector current is chosen for each transistor considering the maximum power gain and the Kirk effect. The collector-emitter voltage is set at a value for which the maximum collector efficiency is achieved. The HCBT with the lowest-doped n-collector provides a wideband large-signal performance due to the near-50 Ω optimal impedances, achieving output power, gain, and efficiency of 21.8 dBm, 10.8 dB, and 45.3%, respectively, at 2.4 GHz. Due to a lower knee voltage, the HCBT with the highest doped n-collector provides the highest efficiency of 22.4% for low input powers, compared to 15.4% for the lowest-doped n-collector device. Therefore, various HCBT structures can be utilized to achieve wide bandwidth and high efficiency in the low-power region.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125532304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) 金刚石超结(SJ)工艺发展:具有金刚石增强超结(SPADES)的超晶格功率放大器
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972725
S. Afroz, Virginia Wheeler, M. Tadjer, J. Gallagher, G. Foster, K. Hobart, Brian Novak, Ken A. Nagamatsu, K. Frey, P. Shea, R. Howell, Josephine B. Chang, A. Koehler, T. Feygelson
{"title":"Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES)","authors":"S. Afroz, Virginia Wheeler, M. Tadjer, J. Gallagher, G. Foster, K. Hobart, Brian Novak, Ken A. Nagamatsu, K. Frey, P. Shea, R. Howell, Josephine B. Chang, A. Koehler, T. Feygelson","doi":"10.1109/BCICTS45179.2019.8972725","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972725","url":null,"abstract":"The Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) device is being developed to enable a 2x increase in breakdown voltage of a Super-Lattice Castellated Field Effect Transistor (SLCFET) device. Incorporation of a diamond superjunction (SJ) within the drain region of a SLCFET was previously predicted to improve breakdown voltage with minimal impact on performance. P-type doped nanocrystalline diamond (NCD) is grown within etched trenches in the drain region of a SLCFET and tied to the gate, forming an active vertical field plate to laterally distribute electric field. Under high drain bias, mutual depletion regions are formed in the current carrying ridges and NCD in the drain region. This results in lower parasitic capacitance compared to a metal field plate, an important consideration for millimeter wave applications. On devices with an NCD SJ, we observe minimal capacitance penalty, low dispersion, and breakdown voltage behavior consistent with TCAD model prediction.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120955015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology 采用28纳米CMOS技术的高精度8位功率控制的19.5 dBm功率放大器，适用于汽车雷达应用
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972775
Daniel Reiter, Hao Li, H. Knapp, Jonas Kammerer, J. Fritzin, S. Majied, Badou Sene, N. Pohl
{"title":"A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology","authors":"Daniel Reiter, Hao Li, H. Knapp, Jonas Kammerer, J. Fritzin, S. Majied, Badou Sene, N. Pohl","doi":"10.1109/BCICTS45179.2019.8972775","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972775","url":null,"abstract":"A 19.5 dBm power amplifier (PA) with a fine power step-size of 0.5 dB for an output power from 5 dBm to 19.5 dBm is designed and implemented in an advanced CMOS technology. This accurate power controlling is achieved by using an 8-bit digitally controlled current source and this ensures also a stable power controlling over the temperature and supply range with a 29 dB dynamic range. The implemented three-stage PA with a device stacking technique has a maximum small signal gain of 43 dB and delivers a maximum saturated output power of 19.5 dBm at 25 °C and 18.5 dBm at 125 °C. The PA core has an area of 0.053 mm2 and consumes 290 mA including all on-chip biasing circuits from a single 2.1 V power supply. To the best of authors’ knowledge, the achieved maximum output power and also the power step-size are record values in advanced bulk CMOS technologies without power combining.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122798538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network 基于宽带BPF级间匹配网络的ka波段连续波15.5W 15.6%分数带宽GaN功率放大器MMIC
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972780
K. Nakatani, Y. Yamaguchi, M. Hangai, S. Shinjo
{"title":"A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network","authors":"K. Nakatani, Y. Yamaguchi, M. Hangai, S. Shinjo","doi":"10.1109/BCICTS45179.2019.8972780","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972780","url":null,"abstract":"This paper has reported a Ka-band 15.5W power amplifier Monolithic Microwave Integrated Circuit (MMIC) using 0.15μm Gallium Nitride (GaN) HEMT with 15.6% fractional bandwidth. To realize a wideband power amplifier in Ka-band, a wideband band-pass filter (BPF) inter-stage matching network (ISMN) consists of the equivalent circuit parameters of inter-stage transistors is proposed. As a result, the fabricated 3-stage single-ended power amplifier MMIC using GaN-HEMT achieves a measured saturation output power (Psat) of 41.9 - 42.2dBm (15.5-16.6W) and peak power added efficiency (PAE) of 16.1 - 20.3% over 15.6% bandwidth in 26.5-31GHz under Continuous Wave (CW) operation. To the best of author’s knowledge, that 15.5W output power with 15.6% bandwidth is state-of-the art for GaN power amplifier MMIC under CW operation in Ka-band.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132234736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Ballast Resistor Temperature Effect and Ruggedness 镇流器电阻温度效应和坚固性
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972747
Y. Ngu, E. Gebreselasie, R. Krishnasamy, R. Rassel
{"title":"Ballast Resistor Temperature Effect and Ruggedness","authors":"Y. Ngu, E. Gebreselasie, R. Krishnasamy, R. Rassel","doi":"10.1109/BCICTS45179.2019.8972747","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972747","url":null,"abstract":"The temperature and self-heating behavior of multiple ballast resistor devices structure was examined with the observation that a silicided polysilicon resistor sitting on top of thick oxide has greater self-heating characteristics with little heat dissipated into the substrate. Conversely the same device structure sitting on top of thin oxide has less self-heating and improved heat dissipation to the substrate. Furthermore, the orientation of the device contacts relative to current flow also impacted device nominal resistance and ruggedness.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115043758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications 毫米波应用中fmax超过220 GHz的CE和CB SiGe HBT功率电池的失真分析
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972755
P. Sakalas, A. Mukherjee, M. Schröter
{"title":"Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications","authors":"P. Sakalas, A. Mukherjee, M. Schröter","doi":"10.1109/BCICTS45179.2019.8972755","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972755","url":null,"abstract":"High frequency (h.f.) harmonic distortion (HD) of advanced SiGe heterojunction bipolar transistor (HBT) power-cells in common-emitter CE and commonbase CB configurations with optimized metallization interconnections between were systematically investigated. Nonlinearity sources were analyzed with a compact model. Single-tone harmonics, load-pull at 10, 20, 30, 50 and 220 GHz were analyzed. Investigated devices yielded good linearity in matched conditions at high frequencies (P1dB=3 dBm at 30 GHz) and exhibited power gain of 1.5 dB at 220 GHz in matched conditions.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114271368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Millimeter-Wave CMOS Phased-Array Transceiver Toward 1Tbps Wireless Communication 面向1Tbps无线通信的毫米波CMOS相控阵收发器
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972752
K. Okada
{"title":"Millimeter-Wave CMOS Phased-Array Transceiver Toward 1Tbps Wireless Communication","authors":"K. Okada","doi":"10.1109/BCICTS45179.2019.8972752","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972752","url":null,"abstract":"The wireless communication is one of the key technologies for realizing the future smart society. More than 100Gbps data rate is targeted for satisfying the social demand. In this presentation, some design examples of millimeter-wave transceivers will be introduced such as 120-Gbps W-band transceiver, 28-GHz bi-directional phased-array transceiver. The talk concludes with a discussion on future directions of millimeter-wave wireless communication, based on Shannon and Friis equations.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"233 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115807050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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