Y. Ngu, E. Gebreselasie, R. Krishnasamy, R. Rassel
{"title":"镇流器电阻温度效应和坚固性","authors":"Y. Ngu, E. Gebreselasie, R. Krishnasamy, R. Rassel","doi":"10.1109/BCICTS45179.2019.8972747","DOIUrl":null,"url":null,"abstract":"The temperature and self-heating behavior of multiple ballast resistor devices structure was examined with the observation that a silicided polysilicon resistor sitting on top of thick oxide has greater self-heating characteristics with little heat dissipated into the substrate. Conversely the same device structure sitting on top of thin oxide has less self-heating and improved heat dissipation to the substrate. Furthermore, the orientation of the device contacts relative to current flow also impacted device nominal resistance and ruggedness.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ballast Resistor Temperature Effect and Ruggedness\",\"authors\":\"Y. Ngu, E. Gebreselasie, R. Krishnasamy, R. Rassel\",\"doi\":\"10.1109/BCICTS45179.2019.8972747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature and self-heating behavior of multiple ballast resistor devices structure was examined with the observation that a silicided polysilicon resistor sitting on top of thick oxide has greater self-heating characteristics with little heat dissipated into the substrate. Conversely the same device structure sitting on top of thin oxide has less self-heating and improved heat dissipation to the substrate. Furthermore, the orientation of the device contacts relative to current flow also impacted device nominal resistance and ruggedness.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"144 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ballast Resistor Temperature Effect and Ruggedness
The temperature and self-heating behavior of multiple ballast resistor devices structure was examined with the observation that a silicided polysilicon resistor sitting on top of thick oxide has greater self-heating characteristics with little heat dissipated into the substrate. Conversely the same device structure sitting on top of thin oxide has less self-heating and improved heat dissipation to the substrate. Furthermore, the orientation of the device contacts relative to current flow also impacted device nominal resistance and ruggedness.