{"title":"射频功率放大器水平电流双极晶体管(HCBT)特性分析","authors":"Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj","doi":"10.1109/BCICTS45179.2019.8972731","DOIUrl":null,"url":null,"abstract":"The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT structures for RF power amplifiers. Firstly, the DC collector current is chosen for each transistor considering the maximum power gain and the Kirk effect. The collector-emitter voltage is set at a value for which the maximum collector efficiency is achieved. The HCBT with the lowest-doped n-collector provides a wideband large-signal performance due to the near-50 Ω optimal impedances, achieving output power, gain, and efficiency of 21.8 dBm, 10.8 dB, and 45.3%, respectively, at 2.4 GHz. Due to a lower knee voltage, the HCBT with the highest doped n-collector provides the highest efficiency of 22.4% for low input powers, compared to 15.4% for the lowest-doped n-collector device. Therefore, various HCBT structures can be utilized to achieve wide bandwidth and high efficiency in the low-power region.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers\",\"authors\":\"Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj\",\"doi\":\"10.1109/BCICTS45179.2019.8972731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT structures for RF power amplifiers. Firstly, the DC collector current is chosen for each transistor considering the maximum power gain and the Kirk effect. The collector-emitter voltage is set at a value for which the maximum collector efficiency is achieved. The HCBT with the lowest-doped n-collector provides a wideband large-signal performance due to the near-50 Ω optimal impedances, achieving output power, gain, and efficiency of 21.8 dBm, 10.8 dB, and 45.3%, respectively, at 2.4 GHz. Due to a lower knee voltage, the HCBT with the highest doped n-collector provides the highest efficiency of 22.4% for low input powers, compared to 15.4% for the lowest-doped n-collector device. Therefore, various HCBT structures can be utilized to achieve wide bandwidth and high efficiency in the low-power region.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"90 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers
The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT structures for RF power amplifiers. Firstly, the DC collector current is chosen for each transistor considering the maximum power gain and the Kirk effect. The collector-emitter voltage is set at a value for which the maximum collector efficiency is achieved. The HCBT with the lowest-doped n-collector provides a wideband large-signal performance due to the near-50 Ω optimal impedances, achieving output power, gain, and efficiency of 21.8 dBm, 10.8 dB, and 45.3%, respectively, at 2.4 GHz. Due to a lower knee voltage, the HCBT with the highest doped n-collector provides the highest efficiency of 22.4% for low input powers, compared to 15.4% for the lowest-doped n-collector device. Therefore, various HCBT structures can be utilized to achieve wide bandwidth and high efficiency in the low-power region.
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