基于宽带BPF级间匹配网络的ka波段连续波15.5W 15.6%分数带宽GaN功率放大器MMIC

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972780

K. Nakatani, Y. Yamaguchi, M. Hangai, S. Shinjo

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引用次数: 7

摘要

本文报道了一种采用0.15μm氮化镓HEMT的ka波段15.5W功率放大器单片微波集成电路(MMIC)，其分数带宽为15.6%。为了实现ka波段的宽带功率放大器，提出了一种由级间晶体管等效电路参数组成的宽带带通滤波器级间匹配网络(ISMN)。结果表明，采用GaN-HEMT制备的3级单端功率放大器MMIC在连续波(CW)工作下，在26.5-31GHz的15.6%带宽范围内，测量到的饱和输出功率(Psat)为41.9 ~ 42.2dBm (15.5 ~ 16.6 w)，峰值功率附加效率(PAE)为16.1 ~ 20.3%。据笔者所知，15.5W的输出功率和15.6%的带宽是GaN功率放大器MMIC在ka波段连续波工作下的最新技术。

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A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network

This paper has reported a Ka-band 15.5W power amplifier Monolithic Microwave Integrated Circuit (MMIC) using 0.15μm Gallium Nitride (GaN) HEMT with 15.6% fractional bandwidth. To realize a wideband power amplifier in Ka-band, a wideband band-pass filter (BPF) inter-stage matching network (ISMN) consists of the equivalent circuit parameters of inter-stage transistors is proposed. As a result, the fabricated 3-stage single-ended power amplifier MMIC using GaN-HEMT achieves a measured saturation output power (Psat) of 41.9 - 42.2dBm (15.5-16.6W) and peak power added efficiency (PAE) of 16.1 - 20.3% over 15.6% bandwidth in 26.5-31GHz under Continuous Wave (CW) operation. To the best of author’s knowledge, that 15.5W output power with 15.6% bandwidth is state-of-the art for GaN power amplifier MMIC under CW operation in Ka-band.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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